Spin Dependent Transport in CoFe/ITO Ohmic Contact at Room Temperature

YuanQiang, S.,QiYe, W.,HuaiWu, Z.
DOI: https://doi.org/10.1109/intmag.2006.376345
2006-01-01
Abstract:This paper presents a heavily doped semiconductor indium-tin-oxide (ITO) as the two dimensional electron gas (2DEG). Samples fabricated by electron beam evaporation consists of a structure of glass substrate/30 nm ITO/30 nm CoFe/15 nm ITO/50 nm CoFe. In addition, a two layer structure ITO/CoFe is designed for the test of the I-V relationship of the ITO/CoFe junction. The spin transport through ohmic contact from CoFe into ITO is proved confidently to be true.
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