Optimization of Impact Ionization in Metal–Oxide–Semiconductor Field-Effect Transistors for Improvement of Breakdown Voltage and Specific On-Resistance
Yanning Chen,Yixian Song,Bo Wu,Fang Liu,Yongfeng Deng,Pingrui Kang,Xiaoyun Huang,Yongyu Wu,Dawei Gao,Kai Xu
DOI: https://doi.org/10.3390/electronics13204101
IF: 2.9
2024-10-18
Electronics
Abstract:For the past few decades, metal–oxide–semiconductor field-effect transistors (MOSFETs) have been the most important application in IC circuits. In certain circuit applications, the breakdown voltage and specific on-resistance serve as key electrical parameters. This article introduces a readily accessible approach to enhance the source–drain breakdown voltage (BVDS) of MOSFETs based on the Bipolar-CMOS-DMOS (BCD) platform without extra costs. By attentively refining the process steps and intricacies of the doping procedures, the breakdown voltages of NMOS and PMOS experienced increments of 3.4 V and 4.6 V, translating to enhancements of 31.5% and 50.3%. Parallel simulations offer insightful mechanistic explanations through simulation tools, facilitating superior outcomes. This initiative lays significant groundwork for the advancement of a comprehensive BCD process development framework.
engineering, electrical & electronic,computer science, information systems,physics, applied