Abstract:The dynamical conductivity of interacting multiband electronic systems derived in Ref.[1] is shown to be consistent with the general form of the Ward identity. Using the semiphenomenological form of this conductivity formula, we have demonstrated that the relaxation-time approximation can be used to describe the damping effects in weakly interacting multiband systems only if local charge conservation in the system and gauge invariance of the response theory are properly treated. Such a gauge-invariant response theory is illustrated on the common tight-binding model for conduction electrons in hole-doped graphene. The model predicts two distinctly resolved maxima in the energy-loss-function spectra. The first one corresponds to the intraband plasmons (usually called the Dirac plasmons). On the other hand, the second maximum ($\pi$ plasmon structure) is simply a consequence of the van Hove singularity in the single-electron density of states. The dc resistivity and the real part of the dynamical conductivity are found to be well described by the relaxation-time approximation, but only in the parametric space in which the damping is dominated by the direct scattering processes. The ballistic transport and the damping of Dirac plasmons are thus the questions that require abandoning the relaxation-time approximation.

Effect of Relaxation Time on Electron Transport Properties in Double-Barrier Structures

Dresselhaus Spin-Orbit Coupling Effect On Dwell Time Of Electrons Tunneling Through Double-Barrier Structures

Effect of Structural Relaxation on the Electronic Structure of Graphene on Hexagonal Boron Nitride.

Tuning Bistability And Current Hysteresis In Resonant-Tunneling Structures

Electron Transport Through A Double-Quantum-Dot Structure with Intradot and Interdot Coulomb Interactions

Influence of Transverse Interdot Coupling on Electron Transport Properties in a Double-Quantum-Dot Aharonov-Bohm Structure

Influence of Interlayer Interactions on the Relaxation Dynamics of Excitons in Ultrathin MoS2.

Study on the current bistability and hysteresis in resonant-tunneling structures

Correlated Electron Transport Through Parallel Double-Quantum-dot

Landauer-Büttiker Formula for Time-Dependent Transport Through Resonant-Tunneling Structures : A Nonequilibrium Green ’ S Function Approach

Electron Transport Properties Through Double-Barrier Structures Sandwiching a Wide Band-Gap Layer

Modeling charge relaxation in graphene quantum dots induced by electron-phonon interaction

The Instability of Internal Potential in Double-Barrier Structure

Time-dependent Versus Static Quantum Transport Simulations Beyond Linear Response

Effect of Electron-Phonon Interaction on Nonequilibrium Transport in Quantum Dot Systems

Damping effects in hole-doped graphene: the relaxation-time approximation

Electron waiting times in non-Markovian quantum transport

Lingering Times at Resonance: The Case of Sb-based Tunneling Devices

Time-dependent electron transport through the multi-terminal quantum dot

Reduced electron relaxation rate in multi-electron quantum dots

A direct measurement method of quantum relaxation time