Abstract:Ge gate stacks by exposing oxygen plasma to ALD Al2O3/Ge were proposed.GeOx formed between Al2O3 and Ge significantly reduces interface state density.High electron mobility of 690cm2/Vs in Ge nMOSFETs with EOT of 0.7-0.8nm.High hole mobility of 546cm2/Vs in Ge p-MOSFETs with EOT of 0.7-0.8nm. CMOS utilizing high mobility Ge channels on Si substrates is expected to be one of promising devices for high performance and low power advanced LSIs. Here, one of the most critical issues in Ge MOSFETs is the realization of gates stacks with superior MOS interfaces. We have proposed novel Ge gate stack technology using ultrathin Ge oxide interfacial layers (ILs). The Ge ILs are formed by exposing ECR oxygen plasma to thin Al2O3 on Ge substrates, which is called plasma post oxidation. Here, Al2O3 serves as a sufficient oxygen barrier that suppresses the growth of unnecessarily-thick GeOx IL, thanks to its intrinsic oxygen permeability. The relationship between the GeOx thickness and interface state density (Dit) is evaluated. Also, in order to further reduce EOT, we have introduced a revised version of gate stack formation using HfO2/Al2O3 stacks. The role of ultrathin Al2O3 films on the properties of the gate stacks is studied. As a result, HfO2/Al2O3/GeOx/Ge gate stacks having EOT of 0.72nm as the thinnest value have been realized with the excellent interface quality. High electron mobility of 754 and 690cm2/Vs and hole mobility of 596 and 546cm2/Vs have been obtained in EOT of 0.82 and 0.76nm, respectively.

Study on the Impact of Germanium Preamorphization on the Work Function of Fully Silicided NiSi Gate

Study on the impact of Ge-implantation on the work function of fully silicided NiSi gate as ultra-shallow junction formed by using germanium preamorphization

Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric

Performance Comparison Between Si and Ge pDG-FETs for Different Channel Lengths Based on Hole Transport Simulation

Research Progress in Ge-based Advanced Field Effect Transistor Technology

Impact of the Si Content on the Electrical Properties of NiSi x Ge 1– x Source/Drain Contact Metal for Ge pMOSFETs

Ge CMOS Technology with Advanced Interface and Junction Engineering.

Pre-doping Effects on Ni Fully Silicided Metal Gate on SiO2 Dielectric

Impact of Various Silicide Techniques on SiGe Source–drain Series Resistance and Mobility of Pmosfets

MOS interface control of high mobility channel materials for realizing ultrathin EOT gate stacks

Mos Interface Control Technologies for Iii-V/Ge Channel Mosfets

Ge gate stacks based on Ge oxide interfacial layers and the impact on MOS device properties

Physical mechanism determining Ge p- and n-MOSFETs mobility in high Ns region and mobility improvement by atomically flat GeOx/Ge interfaces

(Invited) III-V/Ge CMOS Device Technologies for High Performance Logic Applications

45-Nm Node NiSi FUSI on Nitrided Oxide Bulk CMOS Fabricated by a Novel Integration Process

Properties of a Ni-FUSI Gate Formed by the EBV Method and One-Step RTA

Alloying Effects in Ni Silicide for CMOS Applications

The Influence of the Epitaxial Growth Process Parameters on Layer Characteristics and Device Performance in Si-Passivated Ge Pmosfets

Characterization of Ni/Ho and Ni/Er Fully Silicided Metal Gates on SiO2 Gate Dielectric

Effect of annealing on interfacial and band alignment characteristics of HfO 2/SiO 2 gate stacks on Ge substrates

Atomic Layer Deposition of HfO2 Gate Dielectric with Surface Treatments and Post-metallization Annealing for Germanium MOSFETs