Abstract:The nature of bandedge electronic structure represents a theoretically interesting and technologically important question in arsenic-doped narrow-gap HgCdTe. In this study, temperature-dependent (11-290 K) photo-reflectance (PR) measurements were carried out in midinfrared spectral region on three as-grown arsenic (As)-doped narrow-gap Hg1-xCdxTe (x=0.317, 0.287, and 0.310, respectively) samples prepared by molecular-beam epitaxy. Low-energy photomodulated Fabry-Perot interference (FPI) and high-energy Franz-Keldysh oscillation (FKO) were analyzed and bandedge PR features were discriminated. Curve fittings of the bandedge PR features were performed, band-gap and below-gap PR processes were identified, and critical energies were determined. While no obvious FPI and FKO could be identified for the sample with a doping level of about 10(18) cm(-3), they were strong for the doping levels of about 10(16)-10(17) cm(-3), and got enhanced with temperature. Detailed analyses indicated that the below-gap PR features are linked to donor-acceptor, conduction-bandacceptor, and donor-valence-band transitions. The average energy levels of the donor and acceptor states were evaluated to be about 17 +/- 1 meV and 27 +/- 3 meV below conduction-band minimum, and 14 +/- 1 meV above valence-band maximum at 77 K, and the origins were assigned to As-Hg, Te-Hg, and V-Hg, respectively. The effect of possible deep-level impurities were also discussed, and a value of about 69 meV above the valence-band maximum was assumed preliminarily for the second level of VHg acceptor (V-Hg(II)) and 42 meV below the conduction-band minimum for As tetramer [(As-Hg-A(si))(dimmer)](3). The evolution of PR critical energies with temperature was compared with an empirical formula for HgCdTe band-gap energy, and the implication of "effective band gap" was evidenced for the empirical formula. Finally, a schematic diagram was drawn for the bandedge electronic structure of the as-grown As-doped narrow-gap HgCdTe epilayers.

Modulated Photoluminescence Spectra Study on Narrow-gap HgCdTe Liquid Phase Epitaxial Films

PHOTOLUMINESCENCE STUDY ON HG1-XCDXTE THIN-FILM IMPLANTED WITH AS ION

Terahertz photoconductivity of double acceptors in narrow gap HgCdTe epitaxial films grown by molecular beam epitaxy on GaAs(013) and Si(013) substrates

Optical and Electronic Characterization on HgCdTe Materials

Photoluminescence and Raman Scattering Spectroscopies of Mbe-Grown Hg0.68cd0.32te Epilayer

Study of Photoreflectance Spectroscopy in Semiconductor Cd1-xMnxTe/CdTe Superlattices with High Compositions

Anomalous Temperature Dependence of Absorption Edge in Narrow-Gap Hgcdte Semiconductors

In-situ ellipsometric study on composition-dependent short-wave HgCdTe in the process of molecular beam epitaxy growth

Recent Progress and Potential Impact of Modulation Spectroscopy for Narrow-Gap Hgcdte

Arsenic-doped Narrow-Gap HgCdTe Epilayers Studied by Infrared Modulation Spectroscopy

Exciton Properties of Diluted CdTe/CdMnTe Quantum Wells

Study Of Impurity States In P-Type Hg1-Xcdxte Using Far-Infrared Spectroscopy

Spectra Analysis of Annealed Hg1−xCdxTe Molecular Beam Epitaxial Films

Temperature Dependence of the Defect States in LWIR (100) and (111)B HgCdTe Epilayers for IR HOT Detectors

Optical and Structural Properties of Hg0.7Cd0.3Te Epitaxial Films

Study of dislocation density in MBE HgCdTe epilayers

Influence of defect levels in short wavelength Hg1-xCdxTe photodiodes on the performance of device

Infrared Photoluminescence of Arsenic-Doped Hgcdte in A Wide Temperature Range of Up to 290 K

Evolution of Infrared Photoreflectance Lineshape with Temperature in Narrow-Gap HgCdTe Epilayers

Composition Control and Surface Defects of MBE-grown HgCdTe

Impurity Levels and Bandedge Electronic Structure in As-Grown Arsenic-Doped HgCdTe by Infrared Photoreflectance Spectroscopy