Abstract:The TaSi(n) (n=1-13) clusters with doublet, quartet, and sextet spin configurations have been systematically investigated by a relativistic density functional theory with the generalized gradient approximation available in Amsterdam density functional program. The total bonding energies, equilibrium geometries, Mulliken populations as well as Hirshfeld charges of TaSi(n) (n=1-13) clusters are calculated and presented. The emphasis on the stabilities and electronic properties is discussed. The most stable structures of the small TaSi(n) (n=1-6) clusters and the evolutional rule of low-lying geometries of the larger TaSi(n) (n=7-13) clusters are obtained. Theoretical results indicate that the most stable structure of TaSi(n) (n=1-6) clusters keeps the similar framework as the most stable structure of Si(n+1) clusters except for TaSi(3) cluster. The Ta atom in the lowest-energy TaSi(n) (n=1-13) isomers occupies a gradual sinking site, and the site moves from convex, to flatness, and to concave with the number of Si atom varying from 1 to 13. When n=12, the Ta atom in TaSi(12) cluster completely falls into the center of the Si frame, and a cagelike TaSi(12) geometry is formed. Meanwhile, the net Mulliken and Hirsheld populations of the Ta atom in the TaSi(n) (n=1-13) clusters vary from positive to negative, manifesting that the charges in TaSi(n) (n>/=12) clusters transfer from Si atoms to Ta atom. Additionally, the contribution of Si-Si and Si-Ta interactions to the stability of TaSi(n) clusters is briefly discussed. Furthermore, the investigations on atomic averaged binding energies and fragmentation energies show that the TaSi(n) (n=2,3,5,7,10,11,12) clusters have enhanced stabilities. Compared with pure silicon clusters, a universal narrowing of highest occupied molecular orbital-lowest unoccupied molecular orbital gap in TaSi(n) clusters is found.

Oxidation Pattern of Small Silicon Oxide Clusters: Structures and Stability of Si6On (n = 1-12).

Metal-Free, Room-Temperature Oxygen-Atom Transfer in the N 2 O/CO Redox Couple as Catalyzed by [Si 2 O x ] .+ (x=2-5).

Oxygen adsorption on small Si clusters: A full-potential linear-muffin-tin-orbital molecular-dynamics study

Structures and Stabilities of Small Silicon Clusters : Ab Initio Molecular-Orbital Calculations of Si 7 – Si 11

First-principles Study of Small Oxidized Silver Clusters.

Magic Number Behaviour and Structures of Silicon Dioxide-Based Clusters

Formation and Oxidation of Si Nanoclusters in Er-Doped Si-Rich Siox

Bonding of oxygen at the oxide/nanocrystal interface of oxidized silicon nanocrystals: An ab initio study

Atomic-Scale Dynamics of the Formation and Dissolution of Carbon Clusters in SiO2

Adsorption of O Adatoms on Hydrogenated Si Cluster

Structures and Stability of Medium Silicon Clusters. Ii. Ab Initio Molecular Orbital Calculations of Si-12-Si-20

Formation, Structures and Electronic Properties of Silicene Oxides on Ag(111)

The Structure and Stability of Si@Al12Hn (n=1−14) Clusters

Density Functional Theory Study on the Oxidation of Hydrosilylated Silicon Nanocrystals

Ab initio calculation of the evolution of [SiN<sub>4-</sub><i><sub>n</sub></i>O<i><sub>n</sub></i>] tetrahedron during <i></i>-Si<sub>3</sub>N<sub>4</sub>(0001) surface oxidation

Structural and Electronic Properties of TaSi(n) (N=1-13) Clusters: a Relativistic Density Functional Investigation.

Silicene oxides: formation, structures and electronic properties

Competing Atomic and Molecular Mechanisms of Thermal Oxidation

Structures and stabilities of small lead oxide clusters

Oxidation Mechanism Of Si(111)-7 X 7 By Water: A Theoretical Study

First Principles Studies on the Interaction of O2 with X@Al12 (X = Al−, P+, C, Si) Clusters