Photo/electroluminescence properties of an europium (III) complex doped in 4,4′-N,N′-dicarbazole-biphenyl matrix
Yong-Hui Zhou,Liang Zhou,Jing Wu,Hong-Yan Li,You-Xuan Zheng,Xiao-Zeng You,Hong-Jie Zhang
DOI: https://doi.org/10.1016/j.tsf.2010.02.031
IF: 2.1
2010-01-01
Thin Solid Films
Abstract:The photoluminescence properties of one europium complex Eu(TFNB)3Phen (TFNB = 4,4,4-trifluoro-1-(naphthyl)-1,3-butanedione, Phen = 1,10-phenanthroline) doped in a hole-transporting material CBP (4,4′-N,N′-dicarbazole-biphenyl) films were studied. A series of organic light-emitting devices (OLEDs) using Eu(TFNB)3Phen as the emitter were fabricated with a multilayer structure of indium tin oxide, 250Ω/square)/TPD (N,N′-diphenyl-N,N′-bis(3-methyllphenyl)-(1,1′-biphenyl)-4,4′-diamine, 50nm)/Eu(TFNB)3phen (x): CBP (4,4′-N,N′-dicarbazole-biphenyl, 45nm)/BCP (2,9-dimethyl-4,7-diphenyl-l,10 phenanthroline, 20nm)/AlQ (tris(8-hydroxy-quinoline) aluminium, 30nm)/LiF (1nm)/Al (100nm), where x is the weight percentage of Eu(TFNB)3phen doped in the CBP matrix (1–6%). A red emission at 612nm with a half bandwidth of 3nm, characteristic of Eu(III) ion, was observed with all devices. The device with a 3% dopant concentration shows the maximum luminance up to 1169cd/m2 (18V) and the device with a 5% dopant concentration exhibits a current efficiency of 4.46cd/A and power efficiency of 2.03lm/W. The mechanism of the electroluminescence was also discussed.