Current-induced electroresistance in CMR materials La1-xBaxMnO3

Hu, F.X.,Gao, J.,Wang, Z.H.

DOI: https://doi.org/10.1109/INTMAG.2005.1464163

2005-01-01

Abstract:The influence of a transport dc current on electric resistance has been investigated in epitaxial thin films La1-xBaxMnO3 (x = 0.1, 0.3), which typically shows CMR (colossal magnetoresistance) effect. Attention was focused at the influence of the applied dc current on the resistance in the absence of a magnetic field. Significant change of ratio of the peak resistance at different currents was found. The reduction of the peak resistance reaches ∼27%, and ∼13% with a current density up to 1.3 × 105 Acm-2, and 1.25 × 105 Acm-2 for x = 0.1, and 0.3 film, respectively. The current-induced electroresistance in film x = 0.1 is larger than that of x = 0.3 at any applied current density, which is consistent with the observed CMR effect. The film x = 0.1 also shows larger CMR than x = 0.3 at any applied magnetic field. The action of a current density of 1.3 × 105 Acm-2, for the both cases, was found to be equivalent to the MR effect caused by 1.5 T near Curie temperature TC. The phenomenon that the resistance in CMR manganites could be easily controlled by the electric current should be of high interest for both fundamental research and practical application.