Abstract:The equation of motion for the p-polarization field ina wurtzite GaN/AlN multilayer heterostructure is solved for thequasi-confined-optical-phonon modes based on thedielectric-continuum model and Loudon’s uniaxial crystal model.The polarization eigenvector, the dispersion relation of thequasi-confined-optical-phonon modes and theelectron-quasi-confined-phonon interaction Fröhlich-likeHamiltonian are derived. The analytical formulas can be directlyapplied to single/multiple quantum wells (QW’s) and superlattices.The electron-quasi-confined-phonon coupling functions areinvestigated for a given AlN/GaN/AlN single QW with full accountof the strains of the QW structures and the anisotropy effect ofwurtzite crystals. We find that there are two kinds ofquasi-confined-optical-phonon modes in the GaN/AlN QW’s: theGaN-layer quasi-confined-optical-phonon modes and the AlN-layerquasi-confined-optical-phonon modes. There are infinitequasi-confined-optical-phonon branches, labelled by a quantumnumber n (n=1,2,...), with definite symmetry with respectto the center of the AlN/GaN/AlN single QW for a given phonon wavenumber q. The dispersions of thequasi-confined-optical-phonon modes with smaller n are moreobvious than the ones with larger n. Moreover, the modes withsmaller n are much more important for theirelectron-quasi-confined-phonon interactions than those with largern. In most cases, it is enough to consider the modes with n≤8 for the electron-quasi-confined-phonon interactions in a singleGaN/AlN QW. The higher frequency modes are more significant thanthe lower ones. The long-wavelength quasi-confined-optical-phononmodes are much more important for theelectron-quasi-confined-phonon interactions. The GaN-layerquasi-confined-optical-phonon energies and theirelectron-quasi-confined-phonon interaction strength are markedlyincreased due to the strains of the QW structures. The influenceof the strains on the the AlN-layer electron-quasi-confined-phononinteractions can be ignored.

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Fröhlich Electron-Interface Optical Phonon Interactions in N-Layer Low-dimensional Coupling Quantum Structures

Fröhlich Electron-Interface Optical Phonon Interactions in <i>n</i>-Layer Low-dimensional Coupling Quantum Structures

Electron-Phonon Interaction In A Multi-Shell Spherical Nanoheterosystem

Polar interface optical phonon modes and Fröhlich electron–phonon interaction Hamiltonians in wurtzite quantum well wires

ELECTRON-PHONON INTERACTION HAMILTONIANS IN A n-LAYER COUPLING QUANTUM WELL

Fröhlich electron-interface and -propagating optical phonon interactions in a wurtzite multi-shell cylindrical heterostructure

Transfer Matrix Method For The Frohlich Electron-Interface Optical Phonon Interaction In Multilayer Coaxial Cylindrical Quantum-Well Wires

Polar Vibration Spectra Of Interface And Surface Optical Phonons And Their Frohlich Electron-Phonon Iinteractions In Freestanding Symmetrical And Asymmetrical Wurtzite Gan/Ga1-Xalxn Multi-Layer Hetero Structures

Polar Vibration Spectra Of Interface Optical Phonons And Electron-Interface Optical Phonon Interactions In A Wurtzite Gan-Aln Nanowire

Surface and interface optical phonon modes and electron-phonon interaction in a multi-shell spherical system

Interaction Between an Electron and Optical Phonons in Polar Semiconductor Heterostructures

Uniform Descriptions of Electron-IO Phonon Interaction in Structures of Multi-layer Coupling Low-dimensional Systems

Polar Interface Optical Phonon Modes and Fröhlich Electron-Phonon Interaction Hamiltonians in an Arbitrary Layer-Number Quantum Well System

Electron Quasi-Confined-Optical-Phonon Interactions in Wurtzite Gan/Aln Quantum Wells

Propagating Optical Phonons and Their Properties in GaN/AlN Quantum Wells

POLAR VIBRATION SPECTRA OF INTERFACE AND SURFACE OPTICAL PHONONS AND THEIR FRÖHLICH ELECTRON-PHONON INTERACTIONS IN FREESTANDING SYMMETRICAL AND ASYMMETRICAL WURTZITE<font>GaN/Ga</font><sub>1-x</sub><font>Al</font><sub>x</sub><font>N</font>MULTI-LAYER HETEROSTRUCTURES

Dispersion of Interface Optical Phonons and Their Coupling with Electrons in Asymmetrical Wurtzite Gan/Ga1-Xalxn Quantum Wells

Optical-Phonon Modes and Electron-Phonon Interaction in Arbitrary Semiconductor Planar Microcavities

Size and dielectric dependence of interface and surface optical phonons spectra in wurtzite GaN/AlN quantum well wires