Electronic Tuning in WSe 2 /Au via van der Waals Interface Twisting and Intercalation
Qilong Wu,Meysam Bagheri Tagani,Lijie Zhang,Jing Wang,Yu Xia,Li Zhang,Sheng-Yi Xie,Yuan Tian,Long-Jing Yin,Wen Zhang,Alexander N. Rudenko,Andrew T. S. Wee,Ping Kwan Johnny Wong,Zhihui Qin
DOI: https://doi.org/10.1021/acsnano.2c00916
IF: 17.1
2022-03-14
ACS Nano
Abstract:The transition metal dichalcogenide (TMD)–metal interfaces constitute an active part of TMD-based electronic devices with optimized performances. Despite their decisive role, current strategies for nanoscale electronic tuning remain limited. Here, we demonstrate electronic tuning in the WSe2/Au interface by twist engineering, capable of modulating the WSe2 carrier doping from an intrinsic p-type to n-type. Scanning tunneling microscope/spectroscopy gives direct evidence of enhanced interfacial interaction induced doping in WSe2 as the twist angle with respect to the topmost (100) lattice of gold changing from 15 to 0°. Taking advantage of the strong coupling interface achieved this way, we have moved a step further to realize an n–p–n-type WSe2 homojunction. The intrinsic doping of WSe2 can be recovered by germanium intercalation. Density functional theory calculations confirm that twist angle and intercalation-dependent charge transfer related doping are involved in our observations. Our work offers ways for electronically tuning the metal–2D semiconductor interface.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsnano.2c00916.Additional details of the synthesis and experimental characterization results; additional calculations results (PDF)This article has not yet been cited by other publications.
materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology