Abstract:In this paper we introduce an ultrafast photoconductive (PC) switch made from low-temperature-grown GaAs, which was fabricated for the generation and detection of electric transients in an ultrafast scanning tunneling microscope (USTM) system. The PC switch was manufactured on a quartz glass substrate. This transparent substrate allows illumination ranging from the front side to the backside. The use of quartz glass as the substrate enables also the low loss of the transmission of frequencies up to the THz regime. A coplanar strip line (CPS) was integrated on the PC switch, in order to propagate THz pulse on the transmission line. For a CPS with width and spacing of 10 micrometer and the PC switch with width of 50 micrometer, the dark current between the two electrodes is about 0.1 pA with a switch voltage at 10 V. The obtained PC switch showed linear I-P, I-V characteristics, low noise, high sensitivity, low dark current, and low background current. The USTM measurements show also a full width at half maximum (FWHM) pulse width of 1.3 ps.

Characterization of Femtosecond Low-Temperature-Grown GaAs Photoconductive Switch

Ultrafast Time-Response Characteristics Of Algaas Materials

Femtosecond Photo-Conductive Characteristics of Lt-Gaas

Design and Fabrication of Ultrafast Coplanar Strip Photoconductive Switch Based on Low-Temperature Grown GaAs

Response Characteristic of Femtosecond LT-GaAs Photoconductive Switches at Different Voltage Biases

Photoconductive Switch Using Epitaxial Lift-Off Low-Temperature-Grown Gaas

Response Characteristic of Femtosecond Lt-Gaas Photoconductive Switches at Different Voltage Bias

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Investigation of Ultra-Fast Accurately Synchronization Control GaAs Photoconductive Switches

Measurements of Photoconductive Switches with an Ultrafast Scanning Tunneling Microscope

Comparative Study on GaAs Photoconductive Semiconductor Switches

Studying of the Dipole Characteristic of Thz from Photoconductors

Generation Of Steady And Jitter-Free Sub-Nanosecond Electrical Pulses With Gaas Photoconductive Switches

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Analysis on the characteristics of transient signal transmission based on GaAs materials

Delay time in GaAs high-power photoconductive switches

On-wafer Characterization of In0.52Al0.48As/In0.53Ga0.47As Modulation-Doped Field-Effect Transistor with 4.2 Ps Switching Time and 3.2 Ps Delay

Photoconductive switch applied in solid state lasers

Photovoltaic Response Characteristics of GaAs Photoconductive Switches under High Gain Mode

Characteristics of Photoconductivity Oscillation in Semi-Insulating GaAs Photoconductive Semiconductor Switches

Picosecond Joule Heating In Photoconductive Switch Electrodes