Special issue: Silicon-based heterostructure materials - Proceedings of the Symposium D of the 8th IUMRS International Conference on the Electronic Materials (IUMRS-ICEM2002), Xi'an China, June 10-14 2002: Preface

Zhizhen Ye,Erich Kasper,Jinzhong Yu

2002-01-01

International Journal of Modern Physics B

Abstract:null

What problem does this paper attempt to address?

Preface: Phys. Stat. Sol. (a) 203/4

Martin Kittler,Deren Yang

DOI: https://doi.org/10.1002/pssa.200690008

2006-01-01

physica status solidi (a)

Abstract:AbstractThis issue of physica status solidi (a) contains the majority of papers presented at the 2nd Sino–German Symposium “The Silicon Age” which was held at the Lindner Hotel Cottbus, Germany, 19–24 September 2005. This meeting followed the 1st Symposium “Progress in Silicon Materials” held in June 2002 in Hangzhou, P.R. China. 8 Chinese and 14 German scientists from universities, research institutes and industry were invited to present their views about different aspects of silicon.There was a continuous progress in silicon materials development during the last 40–50 years, driven by the need of the IC industry for better and larger monocrystalline silicon wafers. Moreover, low‐cost crystalline silicon now dominates the world's production of solar cells in the photovoltaics industry. Furthermore, there are intensive research activities worldwide for on‐chip integration of Si‐based photonics in CMOS technology. In addition, new areas being connected with silicon are starting to appear, namely Si‐based biochips and nanoelectronics. Silicon, one can reasonably argue, is already the most investigated of all materials. However, there is still a need for continuation of research and development regarding numerous aspects of Si and also SiGe, including related technologies, advanced diagnostics or the role of crystal defects, which are the working fields of many laboratories all over the world. This was also shown by the presentations at the symposium and can be found in the contributions contained in this issue.The organizers would like to thank the participants for their high level contributions and discussions during the symposium. This intensive and open communication allowed the participants to create synergies between the different fields of silicon research and also to build up relationships for cooperation between Chinese and German research groups.Finally, we would like to thank the Sino–German Science Center for the financial support of the symposium.
Preface: Phys. Status Solidi C 6/3

Deren Yang,Martin Kittler

DOI: https://doi.org/10.1002/pssc.200960048

2009-01-01

physica status solidi c

Abstract:AbstractThese proceedings contain the contributions of the 3rd Sino–German Symposium “The Silicon Age: Silicon for Microelectronics, Photonics and Photovoltaics”, which was held from 9 to 14 June 2008 in the HNA Hotel, Hangzhou, P.R. China. Nearly 30 scientists from Germany and China were invited to present their views about different aspects of silicon.In the silicon age, microelectronics has driven the high‐speed development of economy, science and technology in the world during the last century and affects now every aspect of our life. Solar cells based on crystalline Si are expected to cover more than 10% of the worldwide energy consumption in a few decades. Furthermore, there are intensive research activities regarding Si‐based photonics, including on‐chip integration of photonics in CMOS IC technology. In addition, new areas being connected with silicon are starting to appear, such as electrical biochips, micro‐opto‐electro‐mechanics or nanotechnology and nanoelectronics. Silicon, one can reasonably argue, is the most intensively studied solid element of all materials in the world. However, there is still a need for continuation of research and development regarding numerous aspects of Si, which are the field of work of many laboratories all over the world. Examples for such ‘hot’ areas are larger Si crystals/wafers, SiGe hetrostructures for high speed devices, Si‐based light emitters, application of Si in new micro‐opto‐electro‐mechanic devices etc.During the 3rd Sino–German symposium, the progress regarding crystalline silicon materials in different areas has been discussed. German and Chinese scientists from universities and research institutes presented their views about the various facets of silicon materials. The symposium provided a forum for a fruitful, intensive and open communication allowing the participants to build up or intensify relationships for a close cooperation in future.We would like to thank all participants of the symposium for their contributions and the Sino–German Science Centre in Beijing for the financial support of the symposium.October 2008
Special Issue: the Silicon Age

Martin Kittler,Deren Yang

DOI: https://doi.org/10.1002/pssa.200690007

2006-01-01

Abstract:AbstractThe present issue of physica status solidi (a) contains a collection of articles about different aspects of current silicon research and applications, ranging from basic investigations of mono‐ and polycrystalline silicon materials and nanostructures to technologies for device fabrication in silicon photovoltaics, micro‐ and optoelectronics. Guest Editors are Martin Kittler and Deren Yang, the organizers of a recent Sino–German symposium held in Cottbus, Germany, 19–24 September 2005.The cover picture shows four examples of “The Silicon Age”: the structure of a thin film solar cell on low‐cost SSP (silicon sheet from powder) substrate (upper left image) [1], a high‐resolution transmission electron microscopy image and diffraction pattern of a single‐crystalline Si nanowire (upper right) [2], a carrier lifetime map from an n‐type multicrystalline silicon wafer after gettering by a grain boundary (lower left) [3], and a scanning acoustic microscopy image of a bonded 150 mm diameter wafer pair (upper right) [4].
Group IV Semiconductors Materials Research: Growth, Characterization and Applications to Electronics and Spintronics

Gudrun Kissinger,Sergio Pizzini,Leo Miglio,Hiroshi Yamada‐Kaneta,Deren Yang

DOI: https://doi.org/10.1002/pssc.201670137

2016-01-01

Abstract:AbstractThis volume is a collection of papers presented at Symposium K “Group IV Semiconductors Materials Research: Growth, Characterization and Applications to Electronics and Spintronics” at the E‐MRS Spring Meeting 2016 held from May 02–06 in Lille, France. During preparation of our symposium we were facing the sad situation that Prof. Jan Vanhellemont, one of the organizers, prematurely died. Jan Vanhellemont was an outstanding materials researcher and the organizers decided, in agreement with the E‐MRS conference chairs, to dedicate Symposium K in memoriam to him. A brief overview of his scientific career, covering more than 35 years in semiconductor materials science, is given in the beginning of this volume.The major challenges for fundamental research and technological development are no more confined to bulk silicon and silicon devices only, but to a variety of silicon‐based structures, such as Si–Ge alloys, nanostructured and nanocomposite materials, thin and thick films, and heteroepitaxial layers on patterned silicon substrates. Their performances are still driven by defect engineering procedures, novel growth techniques, and advanced diagnostics tools. Point defects and extended defects remain in the center of interest for both electronic and photovoltaic applications, where in some cases their engineering represents a unique option for new functionalities, such as the case of spintronic devices. A special session on spintronics was supported by the Fondazione Cariplo (Milano, Italy).The symposium provided a successful forum for scientists from research institutions and industry from all over the world to discuss recent results and new developments in materials research on group IV elements. In total 80 oral and 43 poster presentations made this symposium a fruitful expert meeting.
Recent Advances in Monolithic Integration of Diverse Technologies with Si CMOS

Tahir Hussain,Dana C. Wheeler,Hasan Sharifi,Keisuke Shinohara,Zhiwei Xu,James C. Li,Pamela R. Patterson,Kenneth R. Elliott,Wonill Ha,Yakov Royter,Peter D. Brewer

DOI: https://doi.org/10.1109/sirf.2014.6828535

2014-01-01

Abstract:HRL Laboratories is part of an intense research and development effort to leverage the enormously advanced infrastructure of Si CMOS and the high performance of diverse electronic and photonic devices in an integrated technology. While System in a Package (SiP) and System on a Chip (SoC) approaches involve chips produced in their native foundries and subsequent integration using hybridization or multi-chip modules, HRL has pioneered approaches where partially completed wafers of diverse technologies are integrated using highly intimate placement and heterogeneous interconnects to enable transistor-level integration. Novel ICs have been produced in InP BiCMOS and CMOS memristor-integrated technologies. Unprecedented design flexibility is being enabled with intimate integration of GaN HEMTs together with InP and CMOS.
Asia Optical Fiber and Optoelectronic 2008 Exposition and Conference: introduction to the special issue.

John Zyskind,Radhakrishnan Nagarajan,Jian-Jun He,Yikai Su

DOI: https://doi.org/10.1364/AO.48.00AOE1

IF: 1.9

2009-01-01

Applied Optics

Abstract:This Applied Optics special issue focuses on optical fibers, fiber components and optoelectronic devices, and materials, highlighting the research presented at the 2008 Asia Optical Fiber and Optoelectronic Exposition and Conference.
Silicon-based Heterostructures for Optoelectronic Synaptic Devices

Yue Wang,Xiaodong Pi,Xiaodong Pi

2023-01-01

Abstract:Silicon (Si) is one of the most important materials for very large-scale integration (VLSI) circuits, which has achieved great success in microelectronics. The advanced mature technology and the low cost of Si have attracted interest for exploring its use in optoelectronic synaptic devices. Si-based heterostructures with rationally designed energy-band alignments pave the way to optoelectronic synaptic devices with a series of advantages such as higher optical sensitivity and lower energy consumption. In this work, we introduce the use of Si-based heterostructures to develop optoelectronic synaptic devices that are based on bulk Si, Si nanomembranes (Si NMs) and Si nanocrystals (Si NCs). The working mechanisms and existing practical applications of these devices are discussed in terms of energy-band alignment. The continuous exploration of Si-based heterostructures contributes to the optoelectronic implementation of neuromorphic systems in the future.
Editorial for two-dimensional materials-based heterostructures for next-generation nanodevices

Guangzhao Wang,Yee Sin Ang,Liujiang Zhou,Hongkuan Yuan

DOI: https://doi.org/10.1088/1361-648x/ad82c8

2024-10-03

Journal of Physics Condensed Matter

Abstract:Heterostructures, such as van der Waals (vdW) heterostructures, provide a versatile platform for engineering the physical properties of two-dimensional (2D) layered materials, spanning electronics, mechanics, optics, as well as electron-phonon couplings. Furthermore, vdW heterostructures, which are composed of metal/semiconductor or semiconductor/semiconductor combinations, not only maintain the unique properties of their individual constituents but also exhibit tunable physical and chemical properties that can be externally adjusted through strain, heat, and electric fields. These externally tunable properties offer significant advances in the fields of solid-state devices and renewable energy applications. Additionally, 2D material-based heterostructures, such as those composed of 0D clusters or quantum dots, as well as 1D nanotubes/wires in combination with 2D materials, also show immense potential for advancing next-generation nanodevices. The vast design space of vdW heterostructures enables their versatile applications spanning numerous fields, such as light-emitting diodes, field-effect transistors, photocatalysis, solar cells, photodetectors, and so on. In the Special Issue of Journal of Physics: Condensed Matter, entitled "Two-dimensional Materials-based Heterostructures for Next-generation Nanodevices", we have gathered a comprehensive collection of 14 articles, presenting the latest achievements in the fields of designing novel 2D materials and 2D heterostructures. Below, we have briefly condensed the essential research findings from these studies.

physics, condensed matter
Si- and Ge-Based Electronic Devices

Yi Zhao,Rui Zhang,Jiwu Lu,Wenfeng Zhang

DOI: https://doi.org/10.1155/2015/864972

2015-01-01

Advances in Condensed Matter Physics

Abstract:In the past few decades, silicon (Si) complementary metaloxide-semiconductor (CMOS) field-effect transistors have been scaled exponentially over time for the demand of drive current enhancement and cost reduction.As the technology node advances into sub-20 nm regimes, Si CMOS encounters immense challenges from both processing and theoretical perspectives.To maintain or further improve the transistor performance, Ge-based electronic transistors are explored as Ge exhibits higher hole and electron mobilities.As compared with the Si CMOS process, the process for fabricating high performance Ge-based transistors is still under development.This special issue aims to address some of the challenges encountered in the state-of-the-art technology, for both the Si-and Ge-based electronic transistors.For Ge MOSFETs, interface engineering and gate dielectric engineering are necessary to reduce the electrical active defects in the Ge surface and the high-/Ge interface.Other than Ge, SiGe is another possible channel material for the future CMOS technology.SiGe could be obtained by directly growing on Si substrate and therefore it has better compatibility with Si CMOS technologies.Besides the research works on Ge-based transistors, this special issue also includes some papers on the Si lateral diffused MOS (LDMOS).Novel structural designs were demonstrated to improve the performance and reliability of the Si LDMOS.Last but not least, this issue also reports a work on increasing the responsivity of the Si n-MOSFET photodetectors.We hope that readers of this special issue will find not only the accurate and most updated data in the papers, but also important solutions for the existing issues in the theory and fabrication of Si-and Ge-based electronic transistors.
Special Issue “building Three-Dimensional Integrated Circuits and Microsystems”

Zhiyuan Zhu,Sixiang Zhang,Shenglin Ma,Ziyu Liu

DOI: https://doi.org/10.3390/pr11030816

IF: 3.5

2023-01-01

Processes

Abstract:With the further innovation of chip technology, semiconductor integrated circuits have made irreplaceable contributions to the development of microelectronic systems [...]
Introduction to the Special Issue on the 2009 IEEE International Solid-State Circuits Conference

Vadim Gutnik,Nikolaus Klemmer,Zhihua Wang,Michael Green,Roland Thewes

DOI: https://doi.org/10.1109/jssc.2009.2032593

IF: 5.4

2009-01-01

IEEE Journal of Solid-State Circuits

Abstract:The 37 papers in this special issue were originally presented at the IEEE International Solid-State Circuits Conference (ISSCC) in San Francisco, CA, in February 2009. They were take from the best of the Analog, Data Converters, RF, Wireless Communications, Wireline Communications, and MEMS, Imagers, and Display sessions.
Advances in Heterostructures for Optoelectronic Devices: Materials, Properties, Conduction Mechanisms, Device Applications

Hyun‐Soo Ra,Sang‐Hyeon Lee,Seock‐Jin Jeong,Sinyoung Cho,Jong‐Soo Lee

DOI: https://doi.org/10.1002/smtd.202300245

IF: 12.4

2023-06-18

Small Methods

Abstract:0D/2D hybrid structures are considered functional materials with complementary advantages that may not be realized with a single component. Here, recent discoveries related to multicomponent hybrid materials are introduced. Research trends in electronic and optoelectronic devices based on hybrid heterogeneous materials are also highlighted and the issues to be solved from the perspective of the materials and devices are discussed. Atomically thin 2D transition metal dichalcogenides (TMDs) have recently been spotlighted for next‐generation electronic and photoelectric device applications. TMD materials with high carrier mobility have superior electronic properties different from bulk semiconductor materials. 0D quantum dots (QDs) possess the ability to tune their bandgap by composition, diameter, and morphology, which allows for a control of their light absorbance and emission wavelength. However, QDs exhibit a low charge carrier mobility and the presence of surface trap states, making it difficult to apply them to electronic and optoelectronic devices. Accordingly, 0D/2D hybrid structures are considered as functional materials with complementary advantages that may not be realized with a single component. Such advantages allow them to be used as both transport and active layers in next‐generation optoelectronic applications such as photodetectors, image sensors, solar cells, and light‐emitting diodes. Here, recent discoveries related to multicomponent hybrid materials are highlighted. Research trends in electronic and optoelectronic devices based on hybrid heterogeneous materials are also introduced and the issues to be solved from the perspective of the materials and devices are discussed.

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Rise of Silicene: A Competitive 2d Material

Jijun Zhao,Hongsheng Liu,Zhiming Yu,Ruge Quhe,Si Zhou,Yangyang Wang,Cheng,Hongxia Zhong,Nannan Han,Jing Lu,Yugui Yao,Kehui Wu

DOI: https://doi.org/10.1016/j.pmatsci.2016.04.001

IF: 48.165

2016-01-01

Progress in Materials Science

Abstract:Silicene, a silicon analogue of graphene, has attracted increasing attention during the past few years. As early as in 1994, the possibility of stage corrugation in the Si analogs of graphite had already been theoretically explored. But there were very few studies on silicene until 2009, when silicene with a low buckled structure was confirmed to be dynamically stable by ab initio calculations. In spite of the low buckled geometry, silicene shares most of the outstanding electronic properties of planar graphene (e.g., the "Dirac cone", high Fermi velocity and carrier mobility). Compared with graphene, silicene has several prominent advantages: (1) a much stronger spin-orbit coupling, which may lead to a realization of quantum spin Hall effect in the experimentally accessible temperature, (2) a better tunability of the band gap, which is necessary for an effective field effect transistor (FET) operating at room temperature, (3) an easier valley polarization and more suitability for valleytronics study. From 2012, monolayer silicene sheets of different superstructures were successfully synthesized on various substrates, including Ag(111), Ir(1 1 I), ZrB2(0001), ZrC(111) and MoS2 surfaces. Multilayer silicene sheets have also been grown on Ag(1 1 1) surface. The experimental successes have stimulated many efforts to explore the intrinsic properties as well as potential device applications of silicene, including quantum spin Hall effect, quantum anomalous Hall effect, quantum valley Hall effect, superconductivity, band engineering, magnetism, thermoelectric effect, gas sensor, tunneling FET, spin filter, and spin FET, etc. Recently, a silicene FET has been fabricated, which shows the expected ambipolar Dirac charge transport and paves the way towards silicene-based nanoelectronics. This comprehensive review covers all the important theoretical and experimental advances on silicene to date, from the basic theory of intrinsic properties, experimental synthesis and characterization, modulation of physical properties by modifications, and finally to device explorations. (C) 2016 Elsevier Ltd. All rights reserved.
Strain-tunable electronic structure and anisotropic transport properties in Janus MoSSe and g-SiC van der Waals heterostructure

Yu-Liang Liu,Wen-Kai Zhao,Ying Shi,Chuan-Lu Yang

DOI: https://doi.org/10.1039/d1cp00483b

IF: 3.3

2021-01-01

Physical Chemistry Chemical Physics

Abstract:The MoSSe/g-SiC heterostructure with tunable band alignment and anisotropic electronic transport offers opportunities for achieving promising applications in photovoltaic and optoelectronic devices.

chemistry, physical,physics, atomic, molecular & chemical
Advanced Scanning Probe Techniques and Materials Research

Kehui Wu,Ying Jiang

DOI: https://doi.org/10.1088/2752-5724/aca0ae

2022-01-01

Materials Futures

Abstract:In this special issue we have included a research article, where the heterostructure of 2D materials CrTe2/Bi2Te3 prepared by molecular beam epitaxy has been studied by STM/STS. In addition, selected topical reviews on the application of STM and AFM on carbon-based materials, 2D materials as well as topological materials have been included. We expect that this special issue will provide some basic concept of the materials physics, which can be revealed by advanced scanning probe techniques.
Organization committee

Zhihua Wang,James C. M. Hwang,Ziqiang Wang,Jim Bao,Jean-Baptiste Begueret,Didier Belot,Georg Boeck,Shujun Cai,Weizen Chen,Tszshing Cheung,Baoyong Chi,Patrick Chiang,Christian Enz,Jianjun Gao,Brian P Gaucher,Jane Gu,Yongxin Guo,Chun Huat Heng,Frank Henkel,Zhiliang Hong,Chun-Ming Hsu,Shuo-hung Hsu,Byunghoo Jung,Kai Kang,Muhammad Faeyz Karim,Chulwoo Kim,Namsoo Kim,Chien-Nan Kuo,Volkan Kursun,Vincent C Lee,Tai-Cheng Lee,Zhenbiao Li,Howard Luong,Kaixue Ma,Pui-In Mak,Akira Matsuzawa,Noriyuki Miura,Makoto Nagata,Hidetoshi Onodera,Ada Poon,Kong-Pang Pun,V. Ramgopal Rao,Woogeun Rhee,Sujiang Rong,Hyunchol Shin,Sai-Weng Sin,Sheng Sun,Tong Tian,Yasumoto Tomita,U Seng-Pan,Huei Wang,Keh Chung Wang,Zhi-Gong Wang,Yang Xu,Haigang Yang,Kiat Seng Yeo,Hyun-Kyu Yu,Patrick Yue,Chun Zhang,Jiajun Zheng,Jian Zhu

DOI: https://doi.org/10.23919/fmcad.2017.8102226

2011-01-01

Abstract:S of the oral presentations Les Diablerets August 30th – September 1st, 2021 QMA 2021 – Quantum Matter Agora « Back to program 2D materials and heterostructures Alberto Morpurgo1,2 1 DQMP, University of Geneva 2 GAP, University of Geneva Exfoliation of layered, van der Waals bonded materials is a very effective strategy to easily produce high-quality, atomically thin crystals of a broad variety of compounds. These so-called 2D materials allow the exploration of a multitude of physical phenomena and regimes, never investigated earlier. Additionally, 2D materials can be controlled in ways that have no analog for conventional bulk crystals. When embedded in an interface or exposed to a perpendicular electric field, for instance, an entire 2D material is modified, whereas in a bulk crystal only the surface is affected. Hence, 2D materials exhibit new phenomena that can be controlled—or engineered—to produce new properties and functionalities. Exploring these phenomena and mechanisms in device structures is the core of the research of the Quantum Electronics group, which I will briefly introduce in my talk.
Electronically Coupled 2D Polymer/MoS 2 Heterostructures

Halleh B. Balch,Austin M. Evans,Raghunath R. Dasari,Hong Li,Ruofan Li,Simil Thomas,Danqing Wang,Ryan P. Bisbey,Kaitlin Slicker,Ioannina Castano,Sangni Xun,Lili Jiang,Chenhui Zhu,Nathan Gianneschi,Daniel C. Ralph,Jean-Luc Brédas,Seth R. Marder,William R. Dichtel,Feng Wang,Jean-Luc Brédas

DOI: https://doi.org/10.1021/jacs.0c10151

IF: 15

2020-12-07

Journal of the American Chemical Society

Abstract:Emergent quantum phenomena in electronically coupled two-dimensional heterostructures are central to next-generation optical, electronic, and quantum information applications. Tailoring electronic band gaps in coupled heterostructures would permit control of such phenomena and is the subject of significant research interest. Two-dimensional polymers (2DPs) offer a compelling route to tailored band structures through the selection of molecular constituents. However, despite the promise of synthetic flexibility and electronic design, fabrication of 2DPs that form electronically coupled 2D heterostructures remains an outstanding challenge. Here, we report the rational design and optimized synthesis of electronically coupled semiconducting 2DP/2D transition metal dichalcogenide van der Waals heterostructures, demonstrate direct exfoliation of the highly crystalline and oriented 2DP films down to a few nanometers, and present the first thickness-dependent study of 2DP/MoS<sub>2</sub> heterostructures. Control over the 2DP layers reveals enhancement of the 2DP photoluminescence by two orders of magnitude in ultrathin sheets and an unexpected thickness-dependent modulation of the ultrafast excited state dynamics in the 2DP/MoS<sub>2</sub> heterostructure. These results provide fundamental insight into the electronic structure of 2DPs and present a route to tune emergent quantum phenomena in 2DP hybrid van der Waals heterostructures.

chemistry, multidisciplinary
Integrated optoelectronics with two-dimensional materials

Zhenzhou Cheng,Rongxiang Guo,Jiaqi Wang,Yi Wang,Zhengkun Xing,Lei Ma,Wei Wei,Yu Yu,Tiegen Liu,Hon Ki Tsang

DOI: https://doi.org/10.1360/nso/20220022

2022-12-02

National Science Open (NSO)

Abstract:Authors: Zhenzhou Cheng, Rongxiang Guo, Jiaqi Wang, Yi Wang, Zhengkun Xing, Lei Ma, Wei Wei, Yu Yu, Hon Ki Tsang and Tiegen Liu. National Science Open Vol. 1 , page 20220022 Published online: 27/10/2022 Keywords: integrated optoelectronics ; two-dimensional materials ; heterogeneous integration ; silicon photonics.
Introduction to the 14~(th) International Symposium on Intercalation Compounds

KANG Fei-yu

DOI: https://doi.org/10.3969/j.issn.1007-8827.2007.03.015

IF: 5.7

2007-01-01

New Carbon Materials

Abstract:This report briefly introduces the 14th International Symposium on Intercalation Compounds(ISIC14)held in Seoul of Korea,June 12-15,2007.More than 300 experts from 21 countries attended this symposium and presented 462 contributions.The presentations of ISIC14 covered a wide range of topics,including(1)nanocarbons,graphite(2)superconducting,magnetic and optical materials(3)electrochemical functional materials(lithium battery,supercapacitors,fuel cell)(4)transition metal chalcogenides(5)hydrogen-storage materials(6)cationic and anionic clays(7)nano composites(8)microporous and mesoporous materials(9)oxides,phosphates,and other layered materials(10)nanomaterials including clathrates and clusters(11)biomaterials and drug delivery systems.ISIC15 will be held in Beijing,China,May 12-15,2009.The organizing chairman of ISIC15 will be Prof.Feiyu Kang from Tsinghua University.
Editorial for the Special Issue “Amorphous and Nanocrystalline Semiconductors: Selected Papers from ICANS 29”

Kunji Chen,Shunri Oda,Linwei Yu

DOI: https://doi.org/10.3390/nano13182594

IF: 5.3

2023-01-01

Nanomaterials

Abstract:The 29th International Conference on Amorphous and Nanocrystalline Semiconductors served as a continuation of the biennial conference that has been held since 1965 [...]

Special issue: Silicon-based heterostructure materials - Proceedings of the Symposium D of the 8th IUMRS International Conference on the Electronic Materials (IUMRS-ICEM2002), Xi'an China, June 10-14 2002: Preface

Preface: Phys. Stat. Sol. (a) 203/4

Preface: Phys. Status Solidi C 6/3

Special Issue: the Silicon Age

Group IV Semiconductors Materials Research: Growth, Characterization and Applications to Electronics and Spintronics

Recent Advances in Monolithic Integration of Diverse Technologies with Si CMOS

Asia Optical Fiber and Optoelectronic 2008 Exposition and Conference: introduction to the special issue.

Silicon-based Heterostructures for Optoelectronic Synaptic Devices

Editorial for two-dimensional materials-based heterostructures for next-generation nanodevices

Si- and Ge-Based Electronic Devices

Special Issue “building Three-Dimensional Integrated Circuits and Microsystems”

Introduction to the Special Issue on the 2009 IEEE International Solid-State Circuits Conference

Advances in Heterostructures for Optoelectronic Devices: Materials, Properties, Conduction Mechanisms, Device Applications

Rise of Silicene: A Competitive 2d Material

Strain-tunable electronic structure and anisotropic transport properties in Janus MoSSe and g-SiC van der Waals heterostructure

Advanced Scanning Probe Techniques and Materials Research

Organization committee

Electronically Coupled 2D Polymer/MoS 2 Heterostructures

Integrated optoelectronics with two-dimensional materials

Introduction to the 14~(th) International Symposium on Intercalation Compounds

Editorial for the Special Issue “Amorphous and Nanocrystalline Semiconductors: Selected Papers from ICANS 29”