Domain-inversion characteristics of congruent and stoichiometric LiNbO 3 crystals

chen yunlin,xu jingjun,song feng,zhang guangyin,li shichen
2001-01-01
Abstract:The characteristics of the ferroelectric domain inversion structures fabricated by applying voltage at room temperature in Z-cut congruent LiNbO3 crystals and stoichiometric LiNbO3 crystals were examined. The voltage required for the domain reversal in congruent crystals is about 2.8 times larger than the voltage required for the domain reversal in stoichiometric crystals. The periodicity of the stoichiometric crystals is more uniform than that of the congruent crystals.
What problem does this paper attempt to address?