Domain Switching Characteristics of the Near Stoichiometric LiNbO3 Doped with MgO

YL Chen,C Lou,JJ Xu,SL Chen,YF Kong,GY Zhang,JP Wen
DOI: https://doi.org/10.1063/1.1597960
IF: 2.877
2003-01-01
Journal of Applied Physics
Abstract:MgO-doped stoichiometric LiNbO3 crystal has been produced using the Czochralski method and vapor transport equilibration technique. The domain reversal characteristics of the near stoichiometric single crystals with different Mg doping levels have been investigated. The switching field required for 180° ferroelectric domain reversal was compared with the near stoichiometric and congruent crystals. The near stoichiometric crystal doped with MgO shows lower switching field than the near stoichiometric and the congruent crystals. The switching field for the domain reversal in the near stoichiometric crystal doped with 2.0 mol % MgO was 1.8±0.2 KV/mm. This is about one third of the switching field for the near stoichiometric crystal, and one tenth of the switching field for the congruent crystal.
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