Computer Simulation Of Reactive Sputtering

Shenglong Zhu,Fuhui Wang,Weitao Wu,Li Xin,ChuanShun Hu,Songlan Yang,Shujiang Geng,Mingsheng Li,Yuming Xiong,Kewei Chen
2001-01-01
Abstract:Computer simulations of direct current reactive sputtering based on a kinetics model were carried out in this article. It was revealed that, reactive sputtering exhibited steady state transition-free and hysteresis-free behavior, only when the sputtering yield of compound was approximately that of the corresponding metal. By changing the configuration of the sputter system (discharge current, target area, pumping rate), it was possible to get a hysteresis-free reactive sputtering behavior. However, it was too difficult to eliminate the steady states transition by this method. The much lower value of the sputtering yield, as compared with that of the corresponding metal, might be the most important cause of the steady state transition and hysteresis effect.
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