Abstract:Embedded non-volatile memory (NVM) plays a significant role in modern information systems. Larger embedded NVM could empower a microcontroller unit (MCU) to run more advanced applications. Compared to conventional embedded NVM, e.g., Flash, Resistive random-access memory (ReRAM) has shown many advantages in speed, power, and cell size. However, heterogeneous integration of ReRAM with logic circuits still faces two key challenges: 1) integrating high-accuracy logic circuits and large-scale ReRAM with reasonable reliability and access speed; 2) achieving multiple bits per cell with acceptable circuit overhead. In this brief, we present a fully integrated 32-bit MCU monolithically integrated with 1Mb programming configurable ReRAM subsystem. Measured results show that the chip achieves >95% read accuracy and a 1.3% mean error for all targets in 3-bit mode. The CMOS circuits are fabricated on a 110nm CMOS process.

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