Electrical Conductivity Enhancement In Nanocrystalline (Re2o3)(0.08)(Zro2)(0.92) (Re=Sc, Y) Thin Films

Yawen Zhang,Sixuan Jin,Yu Yang,Guobao Li,Shujian Tian,Jiangtao Jia,Chunsheng Liao,Chunhua Yan
DOI: https://doi.org/10.1063/1.1328099
IF: 4
2000-01-01
Applied Physics Letters
Abstract:Dense, crack-free, uniform, and homogeneous (RE2O3)(0.08)(ZrO2)(0.92) (RE=Sc, Y) nanocrystalline thin films were fabricated by a simple sol-gel method and characterized by impedance studies. At temperatures beyond 600 degreesC, the electrical conductivity of (Sc2O3)(0.08)(ZrO2)(0.92) and (Y2O3)(0.08)(ZrO2)(0.92) nanocrystals in pure cubic phase was ten times higher than that of the corresponding bulk materials. The decrease of grain boundary resistance related to interfacial effect is predominately responsible for the electrical conductivity enhancement. (C) 2000 American Institute of Physics. [S0003-6951(00)05247-5].
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