Mixed-Mode Simulation of High Voltage and Power IC

张旻,李肇基,杨之廉
DOI: https://doi.org/10.3969/j.issn.1674-4926.2000.10.012
2000-01-01
Chinese Journal of Semiconductors
Abstract:A unified net model of high voltage and power device is presented. Using the two\|level Newton algorithm a circuit\|device mixed\|model simulator of high voltage and power IC is developed based on SPICE3 and PISCES2B,with which the mixed\|mode simulation of high voltage LDMOS switcher is performed. It can directly probe the influence of the power device parameters on the circuits performance and facilitate the design of high voltage and power IC with this method.
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