A Nonlinear Model for Highly Excited Vibrational Energy Levels of Silane

XR Chen,Y Cheng,J Luo,QQ Gou,XF Pang
DOI: https://doi.org/10.1088/1004-423x/8/2/006
1999-01-01
Abstract:The highly excited vibrational energy levels of Sill stretches of silane SiH4 in the electronic ground state are calculated using a three-parameter nonlinear model, i.e., the quantized discrete self-trapping equation. The obtained results are in good agreements with the experimental data and with those obtained from local mode calculations of others. We note that SiH4 molecule is a typical molecule close to the local mode limit, and that when n greater than or equal to 3, the molecule could be thought of as vibrating with the four SiH stretching quanta trapped into a single SiH bond.
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