Optical damage in Zn:Ga:LiNbO 3 waveguide substrates

Yequan Zhao,Wusheng Xu,Hongxi Zhang,Yuheng Xu,Jiyang Wang

DOI: https://doi.org/10.1117/12.370369

1999-01-01

Abstract:ABSTRACT Doping ZnO and Ga203 in LiNbO3 crystal, the Zn:Ga:LiNbO3 was grown by Czochralski method. The infrared transmissionspectra and the photo damage resistance ability of the LiNbO3 and Zn:Ga:LiNbO3 crystal were measured. The protonexchange technology was used to make the LiNbO3 and Zn:Ga:LiNbO3 crystal waveguide substrates. The rn-line methodwas taken to study the photo damage of waveguide substrate. We observed that the threshold of Zn:Ga:LiNbO3 is abovetwo magnitude higher than that of Mg:LiNbO3. Zn:Ga:LiNbO3 crystal is better performance than LiNbO3 crystal.Keywords: Zn:Ga:LiNbO3 crystal, photo waveguide substrate, photo damage, proton exchange, integrated optics, refractiveindex, optical system, light-wave scatter, continuous laser, optical element 1. INTRODUCTION The waveguide optics and thin film technology are the two basic components of integrated optics, which itself is composedof waveguide substrates and other optical elements. The optical wave of light circuit can be defmed as a kind of surfacewave transmission along two-dimension plane. The waveguide element must be in good conditions for a lon time. Therefractive index of waveguide substrate made of LiNbO3 crystal changes when it is rayed by the blue or green laser withhigher density, and the wavelength oftransmittance optical wave depletes, resulting the scattering oflight'3 .