A New Type Three-Dimension Silicon Piezoresistive Accelerometer

Jj Xiong,Xw Li,Wd Zhang

1999-01-01

Abstract:A new type high-g(10000g) three-dimension silicon piezoresistive accelerometer is introduced in this paper. The sensor's principle, structure, mechanical analysis and measurement circuit are described. Finally, fabrication result (SEM photo of the accelerometer) is publicized.

What problem does this paper attempt to address?

Design, Fabrication, and Characterization of a High-Performance Monolithic Triaxial Piezoresistive High-g Accelerometer

Peitao Dong,Xinxin Li,Kun Zhang,Xuezhong Wu,Shengyi Li,Songlin Feng

DOI: https://doi.org/10.3969/j.issn.1674-4926.2007.09.030

2007-01-01

Abstract:A silicon machined high-performance monolithic triaxial piezoresistive accelerometer is developed for measurements on the order of 100, 000g. A three-beam-mass scheme with tiny beams is developed for the x and y axial elements, and a three-beam-twin-mass structure is developed for the z axial element. Both of these structures feature high sensitivity and high resonance frequency compared with a conventional cantilever structure or cantilever-mass structure. ANSYS is used to analyze and optically design the accelerometer. The three sensing elements are monolithically integrated by micromachining techniques of double-sided deep etching combined with piezoresistive processes. The middle structure silicon layer is anodic bonded with glass substrate and BCB bonded with a top cap silicon layer for the purpose of plastic packaging to improve the reliability of the accelerometer. A dropping-bar system is used to characterize the accelerometer. The sensitivities in the x, y, and z axes are measured to be 2.28, 2.36, and 2.52μV/g, respectively, while the corresponding resonant frequencies are 309, 302, and 156kHz. Using a Dongling shock test machine, the nonlinearity is tested by comparison calibration and measured to be 1.4% and 1.8% for the y and z axial elements, respectively.
Design, Manufacture And Test Of Novel Mems Piezoresistive Accelerometer For High G Application

Jj Shi,Yl Hao,W Zhang,Zj Zeng

2004-01-01

Abstract:In order to test the anti-overload ability and the piezoresistive characteristics of silicon, this paper presents design, manufacture, and test of a novel accelerometer sensor, here we adopt crystal silicon as the base to make accelerometer for high g application other than silicon carbide. During the fabrication process, we adopted the bulk-silicon MEMS process empoldered by Peking University, we also explored a new method to attain acute pieresistance, meanwhile ICP and KOH guarantee the perfect release of the structure. Under the high g impact, the structure of the sensor deforms and shows uneven stress distribution, by the help of Wheatstone bridge that composes four piezoresistances, we can achieve the transform: from the inertial impact to the electricity signals. In conclusion, the results show that it has the sensitivity of 450similar to600 nV/g in the test range of 50000g, high anti-overload ability beyond 150000g, high yield(>90%). At the same time, it has the advantages of lower price and better compatibility with IC compared with SiC.
A New Type of Mems Two Axis Accelerometer Based on Silicon

Shang Chen,Chenyang Xue,Wendong Zhang,Jijun Xiong,Binzhen Zhang,Jie Hu

DOI: https://doi.org/10.1109/nems.2008.4484481

2008-01-01

Abstract:A new type of MEMS two axis accelerometer based on silicon is presented in this paper. This kind of sensor consists of four vertical cantilever beams with an attached cylinder in the center of the structure. By locating the resistors logically formed the Wheatstone bridge; this sensor can detect acceleration in two direction. It is desirable that the application of ingenious structure of the accelerometer may improve the sensitivity. The mechanical model and piezoresistive effect are used to analyse the sensitivity characteristic of the novel structure. The fabrication is completed using MEMS technology. The test results are presented at last. The experiment results show that both the two direction of the accelerometer have high sensitivity and good linearity. The sensitivity of the accelerometer for X direction is 1.017 mv/g and Y is 0.898 mv/g, the linearity of the X direction is 0.99991 and Y is 0.99945. The frequency response gives a straight and smooth line and the measured resonance frequency is about 670 Hz.
Fabrication and Testing of a Silicon-Based Piezoresistive Two-Axis Accelerometer

陈尚,薛晨阳,张文栋,张斌珍,张国军,张开瑞

DOI: https://doi.org/10.3969/j.issn.1672-6030.2008.04.007

2008-01-01

Nanotechnology and Precision Engineering

Abstract:A novel two-axis accelerometer was presented in this paper,which is based on piezoresistive detection.This kind of sensor consists of four vertical cantilever beams with attached cylinder in the center of the sturcture.By locating the resis-tor logically to form the Wheatstone birdge,this sensor can measure the acceleration in two directions.The characteristic of structure’s sensitivity was analyzed by the mechanical model and piezoresistive effect.The accelerometer was fabricated on silicon using MEMS technology,and the geometry dimension,residual stress,frequency response and sensitivity were re-spectively tested by means of microsystem analyzer,laser Raman spectroscopy quantitate-stress system and vibrating table.The experimental results show that the accelerometer has high sensitivity and good linearity in two directions.The sensitivity of the X direction and Y direction is 1.017,4,mV/g and 0.897,61,mV/g,respectively,the linearity of the X direction and Y direction is 0.999,91 and 0.999,45,respectively.The curve of frequency response is straight and smooth,and the measured resonance frequency is about 670,Hz.
Piezoresistive Slot-Cantilever Type Accelerometer Inspired from Spider'S Slit Sensilla

Yancheng Wang,Deqing Mei,Zichen Chen

DOI: https://doi.org/10.1166/sl.2011.1690

2011-01-01

Sensor Letters

Abstract:This paper presents a new method by introducing rectangular slits into cantilever to improve the sensing performance of piezoresistive cantilever-type accelerometer. The designed accelerometer consists of a heavy proof mass and supported by a thin slot-cantilever. The slits are inspired from spider's slit sensilla and can be used to amplify the stress/strain due to stress concentration, thus increasing the sensitivity without decreasing too much bandwidth. For the designed accelerometer, an analytical model is established to analyze the sensing performance, and its specifications such as output voltage, sensitivity, resonant frequency are theoretically calculated. The results demonstrate that the sensing performance are greatly affected by the structural dimensions, especially the slits and cantilever. Compared with the simple accelerometer without slits, the sensing performance can be greatly improved by introducing slits. Then, the proposed accelerometers are fabricated by using bulk silicon micromachining technology. Series of testing experiments are conducted to study the sensing performance. Both analytical and experiment results show that high sensitivity and large resonant frequency can be simultaneously realized by introducing slot-cantilever structure.
Design of MEMS Three-dimensional Accelerometer Based on Silicon

LIU Lin-xian,ZHANG Guo-jun,XU Jiao,ZHANG Wen-dong

DOI: https://doi.org/10.3969/j.issn.1002-1841.2013.03.005

2013-01-01

Abstract:A MEMS three-dimensional?accelerometer was proposed based on the silicon-based piezoresistive two-dimensional accelerometer.The sensor consists of four beams-column level detection units and double T-shaped vertical detection unit.By the two part detection,this sensor can measure the acceleration in three-direction.The calibration method and finite element method for the accelerometer was proposed.Finally,the experimental results were presented.The experimental results show that frequency response curve of the accelerometer is flat and both the three direction of the accelerometer have high sensitivity,good linearity,and small shaft coupling degree.The sensitivity of the X direction is 2.17 mV/g,Y is 2.08 mV/g and Z is 1.66 mV/g,the nonlinearity of X direction is 0.63%,Y is 0.75% and Z is 1.13%.
A High-g Triaxial Piezoresistive Accelerometer with Sensing Beams in Pure Axial Deformation.

Mingzhi Yu,Libo Zhao,Chen Jia,Hongyan Wang,Yulong Zhao,Zhuangde Jiang

DOI: https://doi.org/10.1109/nems.2019.8915619

2019-01-01

Abstract:We put forward a novel structure of three-axis high-g piezoresisitive accelerometer with pure axial deformation sensitive beams, which greatly improves the performance of accelerometer. The accelerometer's measurement range is 100,000 g. The advantages of novel structure are as follows. Firstly, the separation of sensor support structure and sensitive structure greatly weakens the coupling relationship between natural frequency and sensitivity. Secondly, the sensitive beam is always in a purely axially deformed state, to make full use of the deformation energy of sensitive beam, that greatly improves the measuring sensitivity of accelerometer. Then we simulated the main performance parameters of proposed accelerometer and optimized the structural parameters of novel structure. The measuring sensitivity of proposed accelerometer is simulated with the value of 1.2 μV/g/3V, and its resonant frequency is greater than 1 MHz. Finally, the fabrication process is designed for the accelerometer chip.
Design, fabrication and experiment of a MEMS piezoresistive high-g accelerometer

Yulong Zhao,Xiaobo Li,Jing Liang,Zhuangde Jiang

DOI: https://doi.org/10.1007/s12206-013-0133-8

IF: 1.81

2013-01-01

Journal of Mechanical Science and Technology

Abstract:High-g accelerometers are widely used in explosion and shock measurement. This paper describes a MEMS piezoresistive high-g accelerometer whose range is more than 50000g. It is designed on the basis of silicon on insulator (SOI) solid piezoresistive chip. The chip has a structure where both ends of the beam are fixed. Through the stress analysis and mode analysis of the accelerometer, the detailed parameters of the structure are established. The experimental results obtained from the drop hammer shock machine test and live-fire test show good properties of the accelerometer such as good output characteristic, repeatability and fast response speed. Therefore, the accelerometer in this paper meets the requirement of explosion and shock measurement basically.
The Design of A Piezoresistive Three-Axis Accelerometer

SUN Jian,ZHAO Yu-long,YUAN Guo-ying,JIANG Zhuang-de,XU Jing-bo

DOI: https://doi.org/10.3969/j.issn.1004-1699.2006.05.234

2006-01-01

Abstract:The design and fabrication of a piezoresistive three-axis accelerometer based on SOI are prsented. The sensor consists of four vertical cantilever beams with attached masses of inertia.By locating the resistor logically formed the Wheatstone birdge, the sensor can measure the acceleration in three-direction. By analyzed and simulated, the accelerometer can be designed. The fabrication and test are presented.
A Novel Hinged Micromachined High-G Piezoresistive Accelerometer

Kebin Fan,Bin Xiong,Lufeng Che,Yuelin Wang

DOI: https://doi.org/10.1117/12.779134

2007-01-01

Abstract:A novel silicon micromachined hinged high-g piezoresistive accelerometer with wide bandwidth is presented. The sensitivity of this accelerometer can be improved while maintaining a high resonance frequency. Based on the simulation of the finite element method, design parameters are obtained for a natural resonance frequency of 573kHz for a large range of 200,000g. The high-g accelerometer is fabricated by advanced silicon bulk micromachining technology. By using a dropping-hammer testing system, characterization measurements show a sensitivity of 0.502μV/g for a 30646g shock acceleration under the 5V excitation.
A High-Performance Monolithic Triaxial High-G Accelerometer

Peitao Dong,Xuezhong Wu,Shengyi Li

DOI: https://doi.org/10.1109/icsens.2007.4388513

2007-01-01

Abstract:A high-performance monolithic triaxial piezoresistive accelerometer is developed for 50000-100000g measure range. An axial-stressed tiny-beam scheme is developed for the X and Y axial elements and a three-beam twin-mass structure is developed for Z-axis element. Both of these structures feature high sensitivity and high resonant frequency. The three sensing elements are monolithically integrated by micromachining techniques of double-sided deep etching combined with piezoresistive processes. A dropping-hammer calibration system is used to characterize the accelerometer. The sensitivity of the three elements is measured as 2.17, 2.25 and 2.64muV/g/5V respectively and the resonant frequency is 308, 303 and 164 kHz for each axial element. A novel time-domain separation method using a long and thin aluminum alloy bar is developed for the dropping test of cross-axis sensitivity. With this measurement technique, satisfactory cross-axis sensitivity is experimentally obtained for all the three axial elements, which contributes to the high-performance monolithic triaxial shock accelerometer.
Simulation Analysis and Fabrication of a Silicon Carbide-Based Piezoresistive Accelerometer

Yanxin Zhai,Haiwang Li,Zhi Tao,Chunhui Yang,Xiaoda Cao,Zhizhao Che,Tiantong Xu

DOI: https://doi.org/10.1088/1742-6596/2246/1/012007

2022-01-01

Journal of Physics Conference Series

Abstract:This paper proposes a Micro Electro Mechanical Systems piezoresistive accelerometer based on a whole SiC substrate. Compared with Si-based sensors, SiC-based sensors have stronger mechanical advantages and unique advantages for applications in ultra-high temperature environments. The characteristics of the accelerometer are designed and numerically simulated, and the accelerometer is evaluated in terms of stress load and working frequency band. An innovative design is carried out to eliminate the stress concentration phenomenon in the corner area of the sensor, which guarantees the working safety of the fragile structure of SiC. After fabrication, packaging and vibration experiment, it is found that the sensor’s working sensitivity can reach 0.21mv/g, and its linearity can reach 98%.
A high g accelerometer based on SOI piezoresistive material with cantilever beam

Yulong Zhao,Libo Zhao,Jianzhong Gao,Zhuangde Jiang

DOI: https://doi.org/10.1115/MNC2007-21518

2007-01-01

Abstract:A high g accelerometer based on Silicon-On-Insulator (SOI) piezoresistive material with cantilever beam is described, which can measure the acceleration up to 105 g. The excellent electrical and mechanical properties of SOI material may be suitable in the applications of the high-g force accelerometer as an electromechanical sensor. One kind of SOI Wheatstone bridge strain silicon gauge is developed, and the size of the SOI silicon gauge is 1.8mm×1.6mm×0.2mm. A kind of cantilever beam structure is designed to endure the impact of high-g acceleration. The SOI silicon gauge is bonded on the cantilever beam by the way of AuSn eutectic. The fabricated devices have been subjected to shock tests up to 105 g by using a Hopkinson's bar, the resonance frequency of which may be up to 40 kHz. The design modeling procedures and results are reported and the fabrication steps are described. Copyright © 2007 by ASME.
Development of A Novel Two Axis Piezoresistive Micro Accelerometer Based on Silicon

Chenyang Xue,Shang Chen,Hui Qiao,Wendong Zhang,Jijun Xiong,Binzhen Zhang,Guojun Zhang

DOI: https://doi.org/10.1166/sl.2008.022

2008-01-01

Sensor Letters

Abstract:This paper describes the design, simulation, fabrication and test results of a novel MEMS two axis accelerometer, which is based on piezoresistive detection. This kind of sensor consists of four vertical cantilever beams with attached plastic cylinder in the center of the structure. A simplified analytical model is established to describe the accelerometer's mechanical behaviour. Finite element modelling is also conducted to verify the analytical model and evaluate the performance of the micro accelerometer. The fabrication of the accelerometer is completed by means of the silicon-on-insulator (SOI) wafer with MEMS technology as well as plastic molding processing. By locating the piezoresistors logically formed the Wheatstone bridge; this sensor can detect two components of acceleration simultaneously. The experiments on sensitivity and frequency response are performed by using a vibrating table, and the results are presented and compared with the theoretical values. The experimental results show that the X and Y axis sensitivities of the micro accelerometer are 1.1177 mv/g and 1.0531 mv/g, respectively The frequency response gives a straight and smooth line and the measured resonance frequency is 713.2 Hz. Comparison of the results obtained from the experiments, analytical model and finite element simulation shows good agreement.
A Two-Axis MEMS Piezoresistive In-Plane Accelerometer with Pure Axially Deformed Microbeams

Mingzhi Yu,Libo Zhao,Weile Jiang,Chen Jia,Zhikang Li,Yulong Zhao,Zhuangde Jiang

DOI: https://doi.org/10.1109/icsens.2018.8589746

2018-01-01

Abstract:Novelty-A novel high performance two-axis piezoresistive accelerometer is developed with high sensitivity and high resonant frequency. The accelerometer with pure axially deformed sensitive micro beams has been designed. The biggest advantage of the sensor structure is that the motion of the sensitive beam always satisfies the direct - stretch - compress condition, that can greatly improve the sensor performance. Meanwhile, the sensitive element separated from the support element, which greatly weakening the direct coupling between the resonant frequency and sensitivity. Then we carry out the finite element method (FEM) simulation, according to the simulation results the sensor structure parameters were optimized and it proved that the stress on the sensitive beam is pure axial stress. The theoretical sensitivity of the sensor with the range of 0-100g is more than 0.9mV/g/3V, and its theoretical resonant frequency is 25kHz. Compared with the sensor performance of existing literatures, the accelerometer has excellent performance.
Design and Application of a High-G Piezoresistive Acceleration Sensor for High-Impact Application

Xiaodong Hu,Piotr Mackowiak,Manuel Bäuscher,Oswin Ehrmann,Klaus-Dieter Lang,Martin Schneider-Ramelow,Stefan Linke,Ha-Duong Ngo

DOI: https://doi.org/10.3390/mi9060266

2018-05-28

Abstract:In this paper, we present our work developing a family of silicon-on-insulator (SOI)⁻based high-g micro-electro-mechanical systems (MEMS) piezoresistive sensors for measurement of accelerations up to 60,000 g. This paper presents the design, simulation, and manufacturing stages. The high-acceleration sensor is realized with one double-clamped beam carrying one transversal and one longitudinal piezoresistor on each end of the beam. The four piezoresistors are connected to a Wheatstone bridge. The piezoresistors are defined to 4400 Ω, which results in a width-to-depth geometry of the pn-junction of 14 μm × 1.8 μm. A finite element method (FEM) simulation model is used to determine the beam length, which complies with the resonance frequency and sensitivity. The geometry of the realized high-g sensor element is 3 × 2 × 1 mm³. To demonstrate the performance of the sensor, a shock wave bar is used to test the sensor, and a Polytec vibrometer is used as an acceleration reference. The sensor wave form tracks the laser signal very well up to 60,000 g. The sensor can be utilized in aerospace applications or in the control and detection of impact levels.
Development of a MEMS Piezoresistive High-g Accelerometer with a Cross-Center Block Structure and Reliable Electrode

Cun Li,Ran Zhang,Le Hao,Yulong Zhao

DOI: https://doi.org/10.3390/s24175540

2024-08-27

Abstract:A MEMS piezoresistive sensor for measuring accelerations greater than 100,000 g (about 106 m/s2) is described in this work. To enhance the performance of the sensor, specifically widening its measurement range and natural frequency, a cross-beam construction with a center block was devised, and a Wheatstone bridge was formed by placing four piezoresistors at the ends of the fixed beams to convert acceleration into electricity. The location of the varistor was determined using the finite element approach, which yielded the optimal sensitivity. Additionally, a reliable Pt-Ti-Pt-Au electrode was designed to solve the issue of the electrode failing under high impact and enhancing the stability of the ohmic contact. The accelerometer was fabricated using MEMS technology, and the experiment with a Hopkinson pressure bar and hammering was conducted, and the bias stability was measured. It had a sensitivity of 1.06 μV/g with good linearity. The simulated natural frequency was 633 kHz The test result revealed that the accelerometer can successfully measure an acceleration of 100,000 g.
Three-Beam-Seismic-Mass Structure Piezoresistive Accelerometer for High Performance Crash Test

Peitao Dong,ZHOU Wei,LI Xin-xin,ZHANG Tun-guo,Yuelin Wang-,Songlin Feng,Shengyi Li

DOI: https://doi.org/10.3969/j.issn.1004-1699.2007.08.015

2007-01-01

Abstract:A silicon micromachined high performance piezoresistive accelerometer is developed for crash assessment.The full measure range is 2 000 gn.For meeting the technical requirements,a novel sensor scheme is used that features both high sensitivity and high dynamic characteristics(including high resonant frequency and precise damping ratio).A three-beam-seismic-mass structure is proposed with the combination of a comb damper.Standard n type (100) silicon wafers are used here for micro-fabrication of the sensors.Double-sided deep RIE is processed for the micromechanical structure that is combined with the piezoresistive integration process.Vibration table test results show that the normalized sensitivity of the accelerometer is measured as 0.11 mV/gn/5 V.The resonance frequency is 31 kHz,with the band of ±5% variation in sensitivity wider than 5 kHz.The shock response and the nonlinearity of the accelerometer are characterized using dropping bar test method.15 000 gn shocking test has been implemented to the packaged device,resulting in safe survival.
Design & Fabrication of a MEMS Piezoresistive Accelerometer with Beam-Film Combined Structure

yan liu,y l zhao,lu sun

DOI: https://doi.org/10.4028/www.scientific.net/AMM.44-47.1305

2011-01-01

Applied Mechanics and Materials

Abstract:In this paper, a MEMS (micro-electro-mechanical system) accelerometer has been developed utilizing piezoresistive sensing elements for vibration measurements in large-scale rotating machineries. The accelerometer consists of highly symmetric beam-film combined structure with 4 p-type piezoresistors diffused on beam surface. The beam and two same films, acting as a whole, give the structure a higher mechanical stiffness making the accelerometer's nature frequency enhanced. During the chip design, classical vibration and elasticity theories are taken advantaged of to determine the dimensions of the sensor chip based on the requirements of industrial practical application. FEM (finite element method) is also used to investigate the performances of the sensor under acceleration load. The device is fabricated by using bulk micromachining technology, and an n-type, (100) oriented silicon wafer is used as the blank of the chip. The packaged sensor is tested and the experimental results show that the sensor has a sufficient linear response (non-linearity <= 0.26%FS) up to 50g with a sensitivity of 1.5mV/g/8V. The resonance frequency of the sensor is about2860Hz, and this allows the usage of the sensor in state monitoring with the necessary bandwidth.
Design of a Biaxial High-G Piezoresistive Accelerometer with a Tension–Compression Structure

Peng Wang,Yujun Yang,Manlong Chen,Changming Zhang,Nan Wang,Fan Yang,Chunlei Peng,Jike Han,Yuqiang Dai

DOI: https://doi.org/10.3390/mi14081492

IF: 3.4

2023-07-26

Micromachines

Abstract:To meet the measurement needs of multidimensional high-g acceleration in fields such as weapon penetration, aerospace, and explosive shock, a biaxial piezoresistive accelerometer incorporating tension–compression is meticulously designed. This study begins by thoroughly examining the tension–compression measurement mechanism and designing the sensor's sensitive structure. A signal test circuit is developed to effectively mitigate cross-interference, taking into account the stress variation characteristics of the cantilever beam. Subsequently, the signal test circuit of anti-cross-interference is designed according to the stress variation characteristics of the cantilever beam. Next, the finite element method is applied to analyze the structure and obtain the performance indices of the range, vibration modes, and sensitivity of the sensor. Finally, the process flow and packaging scheme of the chip are analyzed. The results show that the sensor has a full range of 200,000 g, a sensitivity of 1.39 μV/g in the X direction and 1.42 μV/g in the Y direction, and natural frequencies of 509.8 kHz and 510.2 kHz in the X and Y directions, respectively.

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied

A New Type Three-Dimension Silicon Piezoresistive Accelerometer

Design, Fabrication, and Characterization of a High-Performance Monolithic Triaxial Piezoresistive High-g Accelerometer

Design, Manufacture And Test Of Novel Mems Piezoresistive Accelerometer For High G Application

A New Type of Mems Two Axis Accelerometer Based on Silicon

Fabrication and Testing of a Silicon-Based Piezoresistive Two-Axis Accelerometer

Piezoresistive Slot-Cantilever Type Accelerometer Inspired from Spider'S Slit Sensilla

Design of MEMS Three-dimensional Accelerometer Based on Silicon

A High-g Triaxial Piezoresistive Accelerometer with Sensing Beams in Pure Axial Deformation.

Design, fabrication and experiment of a MEMS piezoresistive high-g accelerometer

The Design of A Piezoresistive Three-Axis Accelerometer

A Novel Hinged Micromachined High-G Piezoresistive Accelerometer

A High-Performance Monolithic Triaxial High-G Accelerometer

Simulation Analysis and Fabrication of a Silicon Carbide-Based Piezoresistive Accelerometer

A high g accelerometer based on SOI piezoresistive material with cantilever beam

Development of A Novel Two Axis Piezoresistive Micro Accelerometer Based on Silicon

A Two-Axis MEMS Piezoresistive In-Plane Accelerometer with Pure Axially Deformed Microbeams

Design and Application of a High-G Piezoresistive Acceleration Sensor for High-Impact Application

Development of a MEMS Piezoresistive High-g Accelerometer with a Cross-Center Block Structure and Reliable Electrode

Three-Beam-Seismic-Mass Structure Piezoresistive Accelerometer for High Performance Crash Test

Design & Fabrication of a MEMS Piezoresistive Accelerometer with Beam-Film Combined Structure

Design of a Biaxial High-G Piezoresistive Accelerometer with a Tension–Compression Structure