Abstract:The detailed understanding of the electronic properties of semiconducting materials requires the determination of their joint density of states (JDOS) and dielectric constant with high spatial resolution. Low electron energy loss spectroscopy (EELS) provides a continuous spectrum which represents all electronic excitations with energies ranging between zero and about 100 eV. Therefore EELS is potentially more powerful than conventional optical spectroscopy which has an intrinsic upper information limit of about 6 eV due to absorption of light from the optical components of the system or the ambient. However, when analysing EELS data, the extraction of the single scattered data needed for Kramers–Kronig calculations is subject to the deconvolution of the zero loss peak from the raw data. This procedure is particularly critical when attempting to study the near-bandgap region of materials with a bandgap below 1.5 eV. In this paper calculation of the electronic properties of some widely studied carbon materials; namely amorphous carbon (a-C), tetrahedral amorphous carbon (ta-C), C60 fullerite crystal as well as synthetic and natural diamond, are presented. Extrapolation of a fit to the absorption data at the onset of an interband transition was used to get an accurate value for the bandgap energy and to determine whether the bandgap is direct or indirect in character. Particular problems relating to the extraction of the single scattered data for these materials are also discussed. The ta-C and C60 fullerite materials are found to be direct bandgap-like semiconductors, having a bandgap of 2.63 and 1.59 eV, respectively. On the other hand, the electronic structure of a-C was unobtainable because it had such a small bandgap that most of the information is contained in the first 1.2 eV of the spectrum, which is a region removed during the zero loss peak deconvolution. The processing of the data obtained from the ta-C material revealed another benefit of using EELS: the electrons of the beam can transfer momentum and energy to the electrons of the material, thus enabling the probing of indirect interband transitions. Use of this extra feature of EELS coupled with the extremely high spatial resolution obtainable in a scanning electron microscope has indicated that tetrahedral carbon thin films might not be amorphous after all, implying the need for a fresh look at their use as electronic materials.

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The same chemical state of carbon gives rise to two peaks in X-ray photoelectron spectroscopy

Photoemission Study of Amorphous Carbon Modifications and Comparison with Calculated Densities of States

Secondary Electron-, Auger Electron- and Reflected Electron-Spectroscopy Study on Sp2-Hybridization Carbon Materials: HOPG, Carbon Glass and Carbon Fiber

Auger Chemical Shift Analysis and Its Applications to the Identification of Interface Species in Thin Films

XPS core-level chemical shift by ab initio many-body theory

High-resolution electron energy loss spectroscopy and angle-resolved ultra-violet photoemission spectroscopy studies of carbon monoxide on a Cs-precovered Ru(10(1)over-bar-0) surface

Study of the Electronic Structure of Carbon Materials Near the Bandgap Using Electron Energy Loss Spectroscopy

Identifying sp-sp2 carbon materials by Raman and infrared spectroscopies.

Insights into the Anomalous Vibrational Frequency Shifts of Co2 Adsorbed to Metal Sites in Microporous Frameworks

Resolving surface chemical states in XPS analysis of first row transition metals, oxides and hydroxides: Sc, Ti, V, Cu and Zn

Making Sense of Complex Carbon and Metal/Carbon Systems by Secondary Electron Hyperspectral Imaging

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Prediction and Measurement of Resonant and Nonresonant Shake Effects in the Core-level X-ray Emission Spectra of 3d^0 Transition Metal Compounds

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Resolving surface chemical states in XPS analysis of first row transition metals, oxides and hydroxides: Cr, Mn, Fe, Co and Ni

Studying the structural and optical properties of carbon quantum dots prepared by electro-chemical method

C 1s Photoemission Investigation of Substrate Bias and Annealing Temperature Influencing the Microstructure of Amorphous Diamond Films

Open charm production in heavy ion collisions and the Color Glass Condensate