Synthesis Of The One Dimensional Telluride: [Mn(En)(3)]Cdsnte4(I) And Its Semiconductor Characteristics

C Zheng,Rj Wang
DOI: https://doi.org/10.3321/j.issn:1001-4861.1999.05.019
1999-01-01
Chinese journal of inorganic chemistry
Abstract:The solvothermal technique was used for the synthesis of [Mn(en)(3)]CdSnTe4(I). The crystal structure has been determined by single crystal X-ray diffraction techniques. The crystal belongs to the triclinic, space group P1(No. 1) with unit cell a = 9.134(2), b = 10.085(3), c = 12.691(3) (Angstrom), alpha = 73.52(2)degrees, beta = 86.05(2)degrees, gamma = 76.43(2)degrees, V = 1089.7(5) Angstrom(3), Z = 2. The results show that the structure is an one-dimensional framework containing a linear chain Zintl anion, (1)(infinity)[CdSnTe4](2-) and a complex cation, [Mn(en)(3)](2+), optical studies on the powder sample of I suggested that the compound is a semiconductor with a band gap of 1.45 eV.
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