Scale Dependence of Submicron Polycrystals Due to Configurational Entropy

Q Yang,W Yang
DOI: https://doi.org/10.1063/1.122774
IF: 4
1998-01-01
Applied Physics Letters
Abstract:It is well known that polycrystals exhibit abnormal Hall-Petch dependence when their grain sizes fall into the submicron range. A plausible explanation is that the scale dependence of the yield stress of submicron polycrystals is mediated not only by the internal energy of the dislocation patterns, but also by their configurational entropy. Two-level dislocation arrangements are explored which naturally embed a grain size. Detailed calculations of the internal energy and the configurational entropy are facilitated by the dislocation pileup theory and the Ashby model of geometric necessary dislocations. It is shown that the present model is capable of interpreting the abnormal Hall-Petch dependence for grain sizes in the submicron range.
What problem does this paper attempt to address?