Coulomb Effects in Perovskite Oxide BaPb1−xZrxO3 Near the Metal-Insulator Transition

YD Zhao,YT Qian,KB Tang,YH Zhang
DOI: https://doi.org/10.1016/s0038-1098(97)10227-7
IF: 1.934
1998-01-01
Solid State Communications
Abstract:We have synthesized a series of samples of BaPb1−xZrxO3 with 0.0 ≤ x ≤ 0.25 using a solid state reaction method and performed X-ray diffraction (XRD) analysis and electrical resistance measurements on them over the temperature range 13K ≤ T < 300K. The XRD analysis indicated that the samples were nearly single phase of cubic perovskite structure. As x increased the metal-insulator (MI) transition occurred near x = 0.15. We observe the existence of the unusual “marginal metallic” state with a negative temperature coefficient and a finite zero temperature resistance over a wide temperature range. We also find a crossover between this “marginal metallic” behavior and Coulomb gap behavior as the critical region of the MI transition is approached.
What problem does this paper attempt to address?