Effect of Deposition and Treatment Conditions on Growth of Nanometer Ptsi Heterostructure
PL Wang,JH Yin,WB Sheng,YF Zheng,LC Zhao,DM Xu
DOI: https://doi.org/10.1116/1.1290369
2000-01-01
Abstract:Under different substrate temperatures, deposition thickness, and annealing temperatures, the growth of nanometer-scale PtSi/p–Si(111) heterostructures prepared by sputtering was investigated by x-ray photoelectron spectrum (XPS), x-ray diffraction (XRD), and atomic force microscopy (AFM) techniques. The results of XPS show that the peaks of the Pt4f chemical binding energies of deposited Pt film specimens shift to higher energies after annealing. Pt, PtSi, and Pt2Si phases existing in the annealed film are verified by XRD. AFM observations prove that the surface morphologies are obviously different with different treatment conditions. The growth of the PtSi phase and the distribution of silicides are intensely affected by the deposition and technological parameters. It is also confirmed that Pt, PtSi, and Pt2Si phases coexist in the same layers. In the present study, the more uniform and flatter heterostructure film of PtSi/p–Si(111) is attained under the conditions with annealing temperature of 500 °C (30 min), substrate of 300 °C, and 5 nm Pt.