Thermoelectric properties of Si-doped B4C semiconductor

Kefeng Cai,Cewen Nan,Shiyuan Li

1998-01-01

Abstract:The effect of doping Si in B4C on the overall thermoelectric properties including electric conductivity, thermal conductivity and Seebeck coefficient as well as the microstructure of B4C semiconductor was investigated. In terms of the small polaron hopping mechanism, the transport behavior of the Si-doped B4C semiconductor is discussed.

What problem does this paper attempt to address?

The Influence of Silicon Dopant and Processing on Thermoelectric Properties of B4C Ceramics

Cai Ke-Feng,Nan Ce-Wen,Min Xin-Min

DOI: https://doi.org/10.1557/proc-545-131

1998-01-01

Abstract:B4C ceramics doped with various content of Si (0 to 2.03 at%) are prepared via hot pressing. The composition and microstructure of the ceramics are characterized by means of XRD and EPMA. Their electrical conductivity and Seebeck coefficient of the samples are measured from room temperature up to 1500K. The electrical conductivity increases with temperature, and more rapidly after 1300K; the Seebeck coefficient of the ceramics also increases with temperature and rises to a value of about 320μVK−1. The value of the figure of merit of Si-doped B4C rises to about 4 × 10−4 K−1 at 1500K.
The effect of silicon addition on thermoelectric properties of a B4C ceramic

Ke-feng Cai,Ce-Wen Nan,Xin-min Min

DOI: https://doi.org/10.1016/S0921-5107(99)00220-2

1999-01-01

Abstract:A B4C ceramic doped with 0.2 at% Si is prepared via hot pressing. The composition and microstructure of the ceramic are characterized by means of X-ray diffraction (XRD) and electron probe microanalysis (EPMA). The electrical conductivity and Seebeck coefficient of the ceramic samples are measured from room temperature up to 1500 K. The electrical conductivity increases with temperature; the Seebeck coefficient also increases with temperature and rises to a value of about 320 μV K−1 at 1500 K. The value of the figure of merit of 0.2 at% Si-doped B4C is higher than that of undoped B4C and rises to about 1×10−4 K−1 at 1500 K. The reason for enhancement in the figure of merit of Si-doped B4C is discussed.
Light Element Doping and Introducing Spin Entropy: an Effective Strategy for Enhancement of Thermoelectric Properties in BiCuSeO.

Jun Tang,Rui Xu,Jian Zhang,Di Li,Weiping Zhou,Xiaotong Li,Zhihe Wang,Feng Xu,Guodong Tang,Guang Chen

DOI: https://doi.org/10.1021/acsami.9b00958

IF: 9.5

2019-01-01

ACS Applied Materials & Interfaces

Abstract:The Seebeck coefficient and carrier mobility in reported doped BiCuSeO system are too small, which limits the improvement of thermoelectric performance. Here, we proposed a novel strategy for optimizing thermoelectric performance by increasing Seebeck coefficient and boosting carrier mobility. We demonstrate that light element Li doping boosts carrier mobility (7.39 cm2 V-1 s-1) due to largely reduced carrier scattering, which results in about 2-fold increase in carrier mobility as compared with reported Bi0.875Ba0.125CuSeO through modulation doping or microstructure texturing. Moreover, the Seebeck coefficient remarkably increases by contribution of spin entropy induced by magnetic ions Mn incorporation. The enhancement of Seebeck coefficient coupled with enhanced electrical conductivity result in high power factor. Furthermore, nanoprecipitates and dual-atom point defect leads to a significant reduction of lattice thermal conductivity. Therefore, a high ZT value of 0.9 was achieved at 873 K through optimizing power factor while maintaining low thermal conductivity. Our findings provide a new perspective for designing prospective thermoelectric materials.
Structural Characteristics and Quantum Chemistry Calculation of Si-Doped Boron Carbides

Xinmin Min,Cewen Nan,Kefeng Cai

DOI: https://doi.org/10.1557/proc-538-579

1998-01-01

MRS Proceedings

Abstract:Structural characteristics, chemical bonds and thermoelectric properties of Si-doped boron carbides are studied through calculations of various structural unit models by using a self-consistent-field discrete variation X α method. The calculations show that Si atom doped in boron carbide is in preference to substituting B or C atoms on the end of boron carbide chain, and then may occupy interstitial sites, but it is difficult for Si to substitute B or C atom in the centers of chain or in the icosahedra. A representative structural unit containing a Si atom is [C-B-Si] ε+ [B 11 C] ε- , while the structural unit without Si is [C-B-B(C)] δ- -[B 11 C] δ+ , and the coexistence of these two different structural units makes the electrical conductivity increases. As the covalent bond of Si-B or Si-C is weaker than that of B-B or B-C, the thermal conductivity decreases when Si is added into boron carbides. With the electrical conductivity increases and the thermal conductivity decreases, Si doping has significant effect on thermoelectric properties of boron carbides.
Effect of titanium carbide addition on the thermoelectric properties of B4C ceramics

K.-f Cai,C.-W Nan,Y Paderno,D.S McLachlan

DOI: https://doi.org/10.1016/S0038-1098(00)00245-3

IF: 1.934

2000-01-01

Solid State Communications

Abstract:TiB2/B4C composite ceramics are prepared via hot pressing, in which the TiB2 particles are formed by introducing TiC0.78 and through the reaction between B4C and TiC0.78. The electrical and thermal conductivities and Seebeck coefficient of samples containing 0, 12.5 and 25.4 vol% TiB2 are measured from room temperature up to 1200 K. The results show that the transport properties of the samples vary with the TiB2 content. The transport properties of a 12.5 vol% TiB2/B4C sample are dominated by the B4C matrix as in undoped B4C ceramics, whilst the transport properties of a 25.4 vol% TiB2/B4C sample an dominated by TiB2 particles. The figure of merit of the 25.4 vol% TiB2/B4C sample is higher than that of the undoped B4C ceramic sample between room temperature and about 700 K, which indicates that it is possible to improve the thermoelectric properties by selecting an optimum combination of different materials. (C) 2000 Elsevier Science Ltd. All rights reserved.
Effect of Sb-Doping on the Thermoelectric Properties of Mg2Si Based Compounds

Zhang Qian,Zhao Xinbing,Yin Hao,Zhu Tiejun

DOI: https://doi.org/10.3321/j.issn:1002-185X.2009.z1.037

2009-01-01

Rare Metal Materials and Engineering

Abstract:Sb-doped and undoped Mg2Si thermoelectric materials were prepared by melting followed by hot-pressing. Effects of doped Sb on the structures and thermoelectric properties of the Mg2Si compounds were investigated. The carrier concentration increases from 3.07x10(19) cm(-3) to 1.25x10(20) cm(-3) and the electron effective mass increases by Sb doping. The Seebeck coefficient, the electrical conductivity and the thermal conductivity were measured from room temperature to 800 K. It is shown that the electrical conductivity increases dramatically due to the doping of 0.3 at% Sb, resulting in a higher dimensionless figure of merit of 0.7 at 783 K.
Tailoring thermoelectric properties through carbon doping and magnetic field variation: A comparative study in 2D h-BN and h-SiC

Somayeh Behzad,Raad Chegel

DOI: https://doi.org/10.1016/j.cjph.2023.12.003

IF: 3.957

2024-02-01

Chinese Journal of Physics

Abstract:The purpose of this work is to study the effects of carbon doping on the thermoelectric properties of monolayer hexagonal boron nitride (h-BN) and hexagonal silicon carbide (h-SiC) in the presence of a magnetic field. We use a tight-binding model and Kubo formalism to calculate the effects of doping concentration, dopant type and applied magnetic field on the heat capacity, electrical conductivity, magnetic susceptibility, and thermoelectric figure of merit. Heat capacity displays a Schottky anomaly that is more prominent at lower dopant concentrations. In the presence of the magnetic field, the Schottky anomaly shifts to lower temperature and its intensity is reduced. The magnetic susceptibility of the doped structures is enhanced by both doping and a magnetic field. The p-type doped structures exhibit higher magnetic susceptibility intensity compared to the n-type doped structures, especially for h-SiC structure. The electrical and thermal conductivities rise from zero at low temperatures, with higher intensity for p-doped structures. Doped h-SiC has higher conductivity at low temperatures, but doped h-BN exceeds it at higher temperatures. A comparison of p- and n-doped h-SiC and h-BN reveals enhanced thermoelectric performance for p-doped structures, further improved by lower dopant concentrations and applied magnetic fields. Overall, the work provides new insights into optimizing the thermoelectric properties of doped h-BN and h-SiC nanostructures through doping and external fields.

physics, multidisciplinary
THERMOELECTRIC PROPERTIES OF Ti-DOPED SiC/TiCx COMPOSITE SYNTHESIZED BY TPPP METHOD

HONG CHEN,YUZHE YIN,YUANJIN HE

DOI: https://doi.org/10.1142/s0217984900000197

2000-01-01

Modern Physics Letters B

Abstract:To improve thermoelectric properties, we attempt to dope Ti into SiC-based composite by transient plastic phase process (TPPP) method. The final result is composed of the functional phase SiC and the reinforcement phases TiC x and TiSi 2. The process of doping is the diffusion of Ti in TiC x solid–solution into SiC grain at high temperature. When the initial SiC is α-type of 5 μm size, the Seebeck coefficient S is less than 10 μV/K at room temperature. SEM photograph shows the reason being that doping is very weak. We change the initial SiC to the β-type of 90 nm size to aid doping. It is observed that S can be significantly improved to 46.3 μV/K at room temperature. When the temperature rises, the improvement is even greater. Measurements of the lattice parameter of β- SiC show that the parameter parallel to the Si–C layer is almost unchanged and the parameter perpendicular to the Si–C layer increases by about 0.48%, which demonstrated that Ti has been successfully doped into the SiC grain and exists as interstitial impurities.
Band Structure Engineering of Bi4O4SeCl2 for Thermoelectric Applications

Jon A. Newnham,Tianqi Zhao,Quinn D. Gibson,Troy D. Manning,Marco Zanella,Elisabetta Mariani,Luke M. Daniels,Jonathan Alaria,John B. Claridge,Furio Corà,Matthew J. Rosseinsky

DOI: https://doi.org/10.1021/acsorginorgau.2c00018

2022-01-01

Abstract:The mixed anion material Bi4O4SeCl2 has an ultralow thermal conductivity of 0.1 W m-1 K-1 along its stacking axis (c axis) at room temperature, which makes it an ideal candidate for electronic band structure optimization via doping to improve its thermoelectric performance. Here, we design and realize an optimal doping strategy for Bi4O4SeCl2 from first principles and predict an enhancement in the density of states at the Fermi level of the material upon Sn and Ge doping. Experimental work realizes the as-predicted behavior in Bi4-x Sn x O4SeCl2 (x = 0.01) through the precise control of composition. Careful consideration of multiple accessible dopant sites and charge states allows for the effective computational screening of dopants for thermoelectric properties in Bi4O4SeCl2 and may be a suitable route for assessing other candidate materials.
PREPARATION OF SiC-B4C COMPOSITE FILM AND ITS MECHANICAL AND THERMOELECTRIC PROPERTIES

王新华

DOI: https://doi.org/10.3321/j.issn:1000-3851.2004.03.010

2004-01-01

Abstract:Preparation and mechanical and thermoelectric properties were studied for SiC-B4C composite films. The results show that thermal plasma PVD with SiC and B4C ultrafine powders as starting materials is a suitable method for the high-rate preparation of SiC-B4C composite films. The good qualified SiC-B4C composite films with a layer-by-layer structure were deposited at a maximum deposition rate of 356 nm/s. The micro Vickers hardness of the deposited films increases with the increasing of B4C content, and the maximum hardness of 35 GPa is obtained. The electrical resistivity and Seebeck coefficient decrease with the increasing of B4C content, and the maximum power factor at 973 K reaches 640 μWm-1K-2 which is 21 times that of sintered SiC.
Effect of heavily doping with boron on electronic structures and optical properties of β-SiC

Gui-Ying Feng,Xiao-Yong Fang,Jun-Jun Wang,Yan Zhou,Ran Lu,Jie Yuan,Mao-Sheng Cao

DOI: https://doi.org/10.1016/j.physb.2010.03.015

2010-01-01

Abstract:The electronic structures and optical properties of heavily boron (B)-doped zinc blende silicon carbide (β-SiC) have been investigated using the plane-wave pseudo-potential method with the generalized gradient approximation (GGA) based on density functional theory. The doped models SinBCn−1 (n=4, 32) have been constructed by β-SiC unit cell. The calculated results show that the band gap of β-SiC transforms from indirect band gap to direct band gap with band gap shrink after carbon atom is replaced by boron atom. The dielectric constant of heavily B-doped β-SiC in low frequency is found to be remarkably larger, so it may act as a new dielectric material. Furthermore, after B doping, absorption peaks appear in the ultra-violet band (5–20eV) and infrared band (0–2eV). The ultra-violet absorption is similar to the undoped β-SiC. The infrared absorption would intensify with the increase of doping concentration, and absorption edge emerges redshift.
Enhanced Thermoelectric Properties of Bi2Sr2Co2Oy by Alkali Metal Element Doping and SiC Dispersion

Mengmeng Fan,Yuewen Zhang,Qiujun Hu,Yan Zhang,Xin-Jian Li,Hongzhang Song

DOI: https://doi.org/10.1016/j.ceramint.2019.05.341

IF: 5.532

2019-01-01

Ceramics International

Abstract:Bi2Sr2Co2Oy (BSCO) is a layered cobalt-based oxide whose thermoelectric properties have been extensively studied recently because its layer structure of CoO2 gives good electrical conductivity. SiC, with larger Seebeck coefficients and higher electrical conductivity, is also widely concerned in the field of thermoelectricity. In this paper, the effects of alkali metal element doping and SiC dispersion on thermoelectric properties of BSCO are studied for two series samples of Bi1.85Na0.15Sr2Co2Oy + m wt% SiC (m = 0, 0.025, 0.05, 0.1, and 0.15) and Bi1.9K0.1Sr2Co2Oy + z wt% SiC (z = 0, 0.025, 0.05, 0.1, and 0.15). After Na+ and K+ replacing Bi(3+ )sites, the electrical resistivity of BSCO is reduced by the increased hole concentration. On the basis of the optimized Na+ and K+ doping, nano-SiC particles are dispersed on the BSCO matrix, which increases the phonon scattering at the interface and greatly reduces the thermal conductivity. Meanwhile, the Seebeck coefficients of Bi2Sr2Co2Oy materials are basically unchanged under the combined action of cation doping and SiC dispersion. The maximum ZT values of 0.26 and 0.24 at 923 K are obtained for m = 0.025 and z = 0.05 Bi2Sr2Co2Oy-based samples, respectively.
Density Functional Theory Study on the B Doping and B/P Codoping of Si Nanocrystals Embedded in SiO2

Zhenyi Ni,Xiaodong Pi,Stefaan Cottenier,Deren Yang

DOI: https://doi.org/10.1103/physrevb.95.075307

2017-01-01

Abstract:Doping silicon nanocrystals (Si NCs) embedded in silicon dioxide (SiO2) with boron (B) and phosphorus (P) is a promising way of tuning the properties of Si NCs. Here we take advantage of density functional theory to investigate the dependence of the structural and electronic properties of Si NCs embedded in SiO2 on the doping of B and P. The locations and energy-level schemes are examined for singularly B-doped or B/P-codoped Si NCs embedded in SiO2 with a perfect or defective Si/SiO2 interface at which a Si dangling bond exists. A dangling bond plays an important role in the doping of Si NCs with B or B/P. The doping behavior of B in Si NCs embedded in SiO2 vastly differs from that of P. The electronic structure of a B/P-codoped Si NC largely depends on the distribution of the dopants in the NC.
The Effect of Tib2 Addition on the Thermoelectric Properties of B4c Ceramics

K Cai,CW Nan

DOI: https://doi.org/10.1109/ict.2001.979885

2001-01-01

Abstract:B4C-TiB2 composites were prepared via hot-pressing. The thermal conductivity, electrical conductivity and Seebeck coefficient of samples containing 0, 12, 16, 20 vol% TiB2 are measured from room temperature up to 1200 K. The results show that the electrical conductivity and thermal conductivity increase with TiB2 content and that the Seebeck coefficient decreases with TiB2 content. The value of dimensionless figure of merit of 12% TiB2 sample is always higher than that of 0% TiB2 sample in the whole temperature range, and that of 16 % TiB2 samples is also higher than that of 0% TiB2 sample as T< 700 K and similar as T>700K, while that of 20% TiB2 samples is lower than that of 0% TiB2 sample due to its higher thermal conductivities and lower Seebeck coefficients than those of 0% TiB2 sample. These results indicate that it is possible to improve the thermoelectric properties of pure materials by selecting an optimum combination of different materials.
Thermoelectric Properties of Ti Doped N-Type SiC Composites

YIN Yuzhe,CHEN Hong,HE Yuanjin

DOI: https://doi.org/10.3321/j.issn:1000-0054.2000.02.002

2000-01-01

Abstract:N type SiC materials with good thermoelectric properties were synthesized by doping Ti into SiC based on composites using the transient plastic phase processing (TPPP) method. The SiC was inifially a nano powder and the holding temperature and time were casefully selected. The power factor f P reaches 1.5×10 -5 W·m·K -2 at room temperature and increases to 1.5×10 -4 W·m·K -2 at 400℃, which is about 100 times the power factor used in the polycarbosilane reacting sintering method. XRD and SEM images show that there are more Ti donors in the SiC when the SiC begins as a nano powder, which contributes to the significant enhancement of the Seeback coefficient.
Enhanced thermoelectric performance of Ca-doped BiCuSeO in a wide temperature range

Li Fu,Wei Tian-Ran,Kang Feiyu,Li Jing-Feng

DOI: https://doi.org/10.1039/c3ta11806a

IF: 11.9

2013-01-01

Journal of Materials Chemistry A

Abstract:The effect of Ca substitution on microstructure and thermoelectric transport properties of BiCuSeO oxyselenide has been studied. The substitution of Ca2+ for Bi3+ reduces both electrical resistivity and Seebeck coefficient due to an increased carrier concentration. However, the enhanced electrical conductivity compensates for the decrease of Seebeck coefficient, and consequently the power factor is greatly improved in the whole temperature range from 300 to 773 K, exceeding 600 μW m-1 K -2 in the Bi1-xCaxCuSeO samples with 0.075 ≤ x ≤ 0.125. Additionally, the lattice thermal conductivity is significantly reduced due to the refined grains and the introduced point defects that limit the phonon mean free path, resulting in a total thermal conductivity lower than 1.0 W m-1 K-1 in all the doped samples. Benefiting from the enhanced electrical conductivity and the reduced thermal conductivity, high ZT values, both at low and medium temperatures, 0.3 at 300 K and 0.8 at 773 K, are achieved for the Bi0.925Ca0.075CuSeO composition. © 2013 The Royal Society of Chemistry.
Impact of Hierarchical Dopant‐Induced Microstructure on Thermoelectric Properties of p‐Type Si‐Ge Alloys Revealed by Comprehensive Multi‐Scale Characterization

Kyuseon Jang,Won‐Seok Ko,Ji‐Hee Son,Jeong‐In Jang,Bongseo Kim,Miquel Vega‐Parades,Hanhwi Jang,Maryam Allahyari,Se‐Ho Kim,KenHee Ryou,Donghyeon Chae,Hail Park,Yeon Sik Jung,Min‐Wook Oh,Chanwon Jung,Christina Scheu,Pyuck‐Pa Choi

DOI: https://doi.org/10.1002/adfm.202403785

IF: 19

2024-04-27

Advanced Functional Materials

Abstract:Hierarchical boron (B)‐induced microstructures of BxSi80Ge20 alloys with broad length scales are fully identified with their all microstructure features. The B‐induced microstructures lead to unusual variations in carrier concentration, density‐of‐states effective mass, and lattice thermal conductivity by their changes in distribution, volume fraction, and strain field around B‐induced phases. Such intricate microstructure‐property relationships determine the optimal doping concentration. Dopant‐induced microstructure in thermoelectric materials significantly affects thermoelectric properties and offers a potential to break the interdependence between electron and phonon transport properties. However, identifying all‐scale dopant‐induced microstructures and correlating them with thermoelectric properties remain a huge challenge owing to a lack of detailed microstructural characterization encompassing all length scales. Here, the hierarchical boron (B)‐induced microstructures in B‐doped Si80Ge20 alloys with different B concentrations are investigated to determine their precise effects on thermoelectric properties. By adopting a multi‐scale characterization approach, including X‐ray diffraction, scanning and transmission electron microscopy, and atom probe tomography, five distinctive B‐induced phases within Si80Ge20 alloys are identified. These phases exhibit different sizes, compositions, and crystal structures. Furthermore, their configuration is comprehensively determined according to B doping concentrations to elucidate their consequential impact on the unusual changes in carrier concentration, density‐of‐states effective mass, and lattice thermal conductivity. The study provides insights into the intricate relationship between hierarchical dopant‐induced microstructures and thermoelectric properties and highlights the importance of investigating all‐scale microstructures in excessively‐doped systems for determining the precise structure‐property relationships.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
The effects of tungsten doping on the thermoelectric properties of Bi2O2Se

Buda Li,Hangbo Qi,Siqin Zhao,Menglu Li,Shan Feng,Xiaotao Zu,Liang Qiao,Haiyan Xiao,Meng Lu Li

DOI: https://doi.org/10.1088/1402-4896/ad3501

2024-03-19

Physica Scripta

Abstract:In this study, we investigate the effects of tungsten doping on the structural, electronic, and thermoelectric properties of Bi2O2Se using density functional theory combined with Boltzmann transport theory. As the tungsten is doped at Bi-site, the introduced additional electrons modify the electronic structure of Bi2O2Se significantly and lead to the metallic character of Bi2O2Se. Meanwhile, tungsten doping improves the electrical conductivity and power factor of Bi2O2Se, and optimizes the figure of merit ZT. This study demonstrates that tungsten doping is an effective method to modify the thermoelectric transport properties of Bi2O2Se.

physics, multidisciplinary
Study on the Targeted Improvement Mechanism of the Carrier Concentration and Mobility of BiCuSeO Ceramics

Zhibin Wang,Hong Zhao,Xinyu Luo,Wenyuan Han,Hao Wang,Linghao Meng,Xinqi She,Anlong Quan,Yixin Peng,Guoji Cai,Yi Liu,Yong Tang,Bo Feng

DOI: https://doi.org/10.3390/mi14091757

IF: 3.4

2023-09-11

Micromachines

Abstract:BiCuSeO has great application prospects in thermoelectric power generation and thermoelectric catalysis, but it is limited by its lower thermoelectric performance. Herein, BiCuSeO bulk materials were prepared using a solid-phase reaction method and a ball-milling method combined with spark plasma sintering, and then the thermoelectric properties were improved by synergistically increasing carrier concentration and mobility. Al was adopted to dope into the BiCuSeO matrix, aiming to adjust the carrier mobility through energy band adjustment. The results show that Al doping would widen the bandgap and enhance the carrier mobility of BiCuSeO. After Al doping, the thermoelectric properties of the material are improved in the middle- and high-temperature range. Based on Al doping, Pb is adopted as the doping element to dope BiCuSeO to modify the carrier concentration. The results show that Al/Pb dual doping in the BiCuSeO matrix can increase the carrier concentration under the premise of increasing carrier mobility. Therefore, the electrical conductivity of BiCuSeO can be improved while maintaining a large Seebeck coefficient. The power factor of Al/Pb doping reached ~7.67 μWcm−1K−2 at 873 K. At the same time, the thermal conductivity of all doped samples within the test temperature range maintained a low level (<1.2 Wm−1K−1). Finally, the ZT value of the Al/Pb-doped BiCuSeO reached ~1.14 at 873 K, which is ~2.72 times that of the pure phase, and the thermoelectric properties of the matrix were effectively improved.

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied

Thermoelectric properties of Si-doped B4C semiconductor

The Influence of Silicon Dopant and Processing on Thermoelectric Properties of B4C Ceramics

The effect of silicon addition on thermoelectric properties of a B4C ceramic

Light Element Doping and Introducing Spin Entropy: an Effective Strategy for Enhancement of Thermoelectric Properties in BiCuSeO.

Structural Characteristics and Quantum Chemistry Calculation of Si-Doped Boron Carbides

Effect of titanium carbide addition on the thermoelectric properties of B4C ceramics

Effect of Sb-Doping on the Thermoelectric Properties of Mg2Si Based Compounds

Tailoring thermoelectric properties through carbon doping and magnetic field variation: A comparative study in 2D h-BN and h-SiC

THERMOELECTRIC PROPERTIES OF <font>Ti</font>-DOPED <font>SiC/TiC</font><sub>x</sub> COMPOSITE SYNTHESIZED BY TPPP METHOD

Band Structure Engineering of Bi<sub>4</sub>O<sub>4</sub>SeCl<sub>2</sub> for Thermoelectric Applications

PREPARATION OF SiC-B4C COMPOSITE FILM AND ITS MECHANICAL AND THERMOELECTRIC PROPERTIES

Effect of heavily doping with boron on electronic structures and optical properties of β-SiC

Enhanced Thermoelectric Properties of Bi2Sr2Co2Oy by Alkali Metal Element Doping and SiC Dispersion

Density Functional Theory Study on the B Doping and B/P Codoping of Si Nanocrystals Embedded in SiO2

The Effect of Tib2 Addition on the Thermoelectric Properties of B4c Ceramics

Thermoelectric Properties of Ti Doped N-Type SiC Composites

Enhanced thermoelectric performance of Ca-doped BiCuSeO in a wide temperature range

Impact of Hierarchical Dopant‐Induced Microstructure on Thermoelectric Properties of p‐Type Si‐Ge Alloys Revealed by Comprehensive Multi‐Scale Characterization

The effects of tungsten doping on the thermoelectric properties of Bi2O2Se

Study on the Targeted Improvement Mechanism of the Carrier Concentration and Mobility of BiCuSeO Ceramics