The Direct Extraction of the Model Parameters for the High-Speed Low-Threshold Semiconductor Laser

JJ Gao,BX Gao,CG Liang
DOI: https://doi.org/10.1109/apmc.1997.654605
1997-01-01
Abstract:A new method which directly extracts the model parameters for the high-speed low-threshold semiconductor laser is presented. Only the terminal impedance characteristics near the threshold and the relaxation oscillation frequency characteristics above the threshold are used and it is not necessary to fit the intensity modulation frequency response or the relative noise intensity response thus avoiding the effect of optical feedback.
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