Abstract:The development of the infrared photoluminescence (IRPL) signal enables the direct non-destructive probing of the trapped electron population in feldspars. Whilst IRPL offers new perspectives for luminescence dating, it also enables detailed, site-selective measurements of the dosimetric defects emitting IRPL at 880 nm (IRPL 880 ) and 955 nm (IRPL 955 ), allowing improved understanding of luminescence phenomena in feldspars. We perform time-resolved IRPL measurements to investigate the excited state lifetimes of IRPL 880 and IRPL 955 electron trapping centres in chemically and structurally different feldspars. We analyse the time-resolved off-time data with three exponentially decaying components. The contribution of the fast component (τ 1 ) fitted to the IRPL 880 data is minor and its lifetime is consistent with the switch off time of the 830 nm excitation laser. The two longer lifetimes (τ 2 and τ 3 ) dominate the IRPL 880 and IRPL 955 signals. The τ 2 values range from 2 μs to 6 μs for IRPL 880 and from 2 μs to 7 μs for IRPL 955 , whereas τ 3 ranges from 7 μs to 25 μs for IRPL 880 and from 8 μs to 22 μs for IRPL 955 , with an average cluster value of ∼20 μs. We observe a weak decreasing trend in τ 3 lifetime with decreasing K-feldspar content. Systematic thermal depletion of the trapped electron population results in decreasing τ 2 lifetimes with increasing preheat temperature, but a negligible change in τ 3 . We suggest that time-resolved-IRPL lifetimes not only reflect the exited state lifetime of the electron trapping centre, affected by excited-to-ground state transition as well as tunnelling, but also a direct recombination from the band tail states. The long excited-state lifetime of the order of 20 ∼ μs (the average cluster value) allows for tunnelling induced recombination from the excited state, which is supported by the fact that reported lifetimes for time-resolved-IRSL (infra-red stimulated luminescence) are shorter than those of time-resolved-IRPL.

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