Electronic effects of oxygen and vanadium impurities in TiAl

Yi Liu,Kuiying Chen,Jinghua Zhang,Zhuangqi Hu,Gang Lu,Nicholas G. Kioussis
DOI: https://doi.org/10.1088/0953-8984/9/45/011
1997-01-01
Abstract:The electronic mechanism of oxygen embrittlement of TiAl and the effect of vanadium on the ductility of TiAl have been investigated by the first-principles LDF DV X-alpha embedded cluster method. According to the impurity formation energy, oxygen energetically prefers to occupy the Ti-rich octahedral interstitial site in TiAl compared with hydrogen. When O impurity is added to pure TiAl, a strong Ti-O bond forms due to Ti d/O p hybridization while no Al-O bond can be observed. The bonding character between Ti atoms changes from d-d sigma type to p-p pi type. In V-doped TiAl, V greatly enhanced the intraplanar and interplanar bonds. The local environmental total bond order (LTBO) provides a reasonable description of the cohesive properties of the local impurity environment. The O impurity reduces the LTBO and partial LTBO of the pure TiAl, while V improves then: greatly. Therefore, O should be regarded as an embrittler, and V as a ductilizer.
What problem does this paper attempt to address?