Abstract:We present a triple junction high power laser diode at 1550nm based on AlInGaAs/InP material system. The device was developed, fabricated, and tested. The laser stacks three AlInGaAs lasers epitaxially connected by two tunnel junctions and grown on InP substrate. The monolithic laser structure with tunnel junction layers is designed in a way to reduce the stress and improve the heat dissipation. Each tunnel junctions is formed with an n-type InGaAs layer and a p-type InGaAs layer. The active area of each junction comprises AlInGaAs barrier and quantum well layers. The design leads to three times the output power of a single junction laser and reaches 1W/A slope efficiency. We demonstrate over 100W peak optical output power at 100A with a 350m aperture and 10 nsec pulse width. A low operating voltage can be achieved with such triple junction design, thus the wall-plug efficiency is two times better. The monolithic triple junction with overall small source size allows efficient optic or fiber coupling, and is an ideal source for applications such as long range LiDAR. Using this new triple junction 1550nm laser diode we benchmark against 905nm in a single-emitter LiDAR for performance comparison. By considering eye safety standards, distance, target reflectivity, and atmospheric loss, the photon budget of 1550nm triple junction can be 80 times more than 905nm. With such advantage, a LiDAR with the new 1550nm triple junction can outperform 905nm by more than 60 times in SNR and more than 24 times in detection probability at a distance longer than 200m.

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