Effective Interband G Factors in Diluted Magnetic Semiconductor Cd1-Xfexte

XZ Wang,CJ Chen,AW Liu,RM Wang,KJ Ma
DOI: https://doi.org/10.1063/1.363402
IF: 2.877
1996-01-01
Journal of Applied Physics
Abstract:The effective interband g factors gamma(Gamma) and gamma(L) at the Gamma and L points of the Brillouin zone for Cd1-xFexTe with x = 0.01 and 0.04 have been determined in the temperature range of 70-300 K from Faraday rotation measurements. The results show that the dominant contribution to gamma(Gamma) is due to the sp-d exchange interaction between Fe2+ ions and free carriers, while the intrinsic contribution is dominant for gamma(L). The exchange interaction integral N-0(beta - alpha) at the Gamma point has also been obtained. (C) 1996 American Institute of Physics.
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