Multifractallity at the mobility edge in amorphous semiconductors

Xuecheng Zou,Zhongyang Xu,Shaoqiang Zhang,ChangAn Wang,Xingjiao Li
1996-01-01
Abstract:A study on the characteristics of the Green's function of amorphous semiconductors was made, and the results show that the electronic wavefunction is of multifractallity at the mobility edge, which influences the temporal decay of quantum wavepackets of the eigen wavefunction, and results in the dependence of the DC conductivity on the fraction-dimension near the localized threshold, at which the localized change of mobility edge occurs in the amorphous semiconductors. Hence it is proposed that it is just the multifractallity of the electronic wavefunction at the mobility edge of amorphous semiconductor which might be one of the key factors that causes the ambiguity of the minimal metallic conductivity.
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