Electronic structure and energy of defects in metals and materials design

Chongyu Wang,Tao Yu

1996-01-01

Progress in Natural Science

Abstract:null

What problem does this paper attempt to address?

Atomic Defects in Two‐Dimensional Materials: from Single‐Atom Spectroscopy to Functionalities in Opto‐/Electronics, Nanomagnetism, and Catalysis

Jinhua Hong,Chuanhong Jin,Jun Yuan,Ze Zhang

DOI: https://doi.org/10.1002/adma.201606434

IF: 29.4

2017-01-01

Advanced Materials

Abstract:Two‐dimensional layered graphene‐like crystals including transition‐metal dichalcogenides (TMDs) have received extensive research interest due to their diverse electronic, valleytronic, and chemical properties, with the corresponding optoelectronics and catalysis application being actively explored. However, the recent surge in two‐dimensional materials science is accompanied by equally great challenges, such as defect engineering in large‐scale sample synthesis. It is necessary to elucidate the effect of structural defects on the electronic properties in order to develop an application‐specific strategy for defect engineering. Here, two aspects of the existing knowledge of native defects in two‐dimensional crystals are reviewed. One is the point defects emerging in graphene and hexagonal boron nitride, as probed by atomically resolved electron microscopy, and their local electronic properties, as measured by single‐atom electron energy‐loss spectroscopy. The other will focus on the point defects in TMDs and their influence on the electronic structure, photoluminescence, and electric transport properties. This review of atomic defects in two‐dimensional materials will offer a clear picture of the defect physics involved to demonstrate the local modulation of the electronic properties and possible benefits in potential applications in magnetism and catalysis.
Electronic-Structure And Defect Spectroscopy Of Point-Defects In Metals

Bl Gu,Ym Lou,Nf Gao,Jj Xiong

DOI: https://doi.org/10.7498/APS.35.17

IF: 0.906

1987-01-01

Acta Physica Sinica

Abstract:Calcul systematique de la structure electronique et de la spectroscopie de temps d\u0027annihilation du positon pour les defauts ponctuels et quasi ponctuels dans les metaux de transition Cr, Fe, Ni et le metal noble Cu. Ces calculs sont effectues en utilisant le formalisme de fonctionnelle densite et l\u0027approximation de densite locale basee sur le modele de jellium
Atomically Resolved Defect-Engineering Scattering Potential in 2D Semiconductors

Hao-Yu Chen,Hung-Chang Hsu,Jhih-Yuan Liang,Bo-Hong Wu,Yi-Feng Chen,Chuan-Chun Huang,Ming-Yang Li,Iuliana P Radu,Ya-Ping Chiu

DOI: https://doi.org/10.1021/acsnano.4c02066

IF: 17.1

2024-06-27

ACS Nano

Abstract:Engineering atomic-scale defects has become an important strategy for the future application of transition metal dichalcogenide (TMD) materials in next-generation electronic technologies. Thus, providing an atomic understanding of the electron-defect interactions and supporting defect engineering development to improve carrier transport is crucial to future TMDs technologies. In this work, we utilize low-temperature scanning tunneling microscopy/spectroscopy (LT-STM/S) to elicit how distinct...

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry, physical
ENERGETICS OF METALLIC DEFECT AND ELECTRONIC STRUCTURE OF DOPED GRAIN BOUNDARY

Chongyu Wang,) Beijing

1997-01-01

Abstract:In this paper, we reviewed that a first principles interatomic potential and the theoretical calculation method of interaction energy between atoms, which are developed by us. Meanwhile, the important role of the energetic functions in the studies of the electronic structure of the impurity-grain boundary complexes and the basic properties of the crystal are reported. On the other hand, the electronic structure and the doping effect of intermetallic compound are studied by the use of first principles method and Green function method. The quantum effect of impurity-grain boundary complexes and the correlation mechanism between the electronic structure with the property of a1loy and dislocation reaction are explored.We find that Boron and Nitrogen have strengthening effect for the cohesion of grain boundary, and the phosphorous and sulphur are embrittle exements in the grain boundary of Ni-base alloy. Molybdemum influence the deformation mechanism of Ti-Al intermetallic compound.
Defect physics in complex energy materials

Khang Hoang,M D Johannes

DOI: https://doi.org/10.1088/1361-648X/aacb05

2018-07-19

Abstract:Understanding the physics of structurally and chemically complex transition-metal oxide and polyanionic materials such as those used for battery electrodes is challenging, even at the level of pristine compounds. Yet these materials are also prone to and their properties and performance are strongly affected or even determined by crystallographic point defects. In this review, we highlight recent advances in the study of defects and doping in such materials using first-principles calculations. The emphasis is on describing a theoretical and computational approach that has the ability to predict defect landscapes under various synthesis conditions, provide guidelines for defect characterization and defect-controlled synthesis, uncover the mechanisms for electronic and ionic conduction and electrochemical extraction and (re-)insertion, and provide an understanding of the effects of doping. Though applied to battery materials here, the approach is general and applicable to any materials in which the defect physics plays a role or drives the properties of interest. Thus, this work is intended as an in-depth review of defect physics in particular classes of materials, but also as a methodological template for the understanding and design of complex functional materials.

Materials Science
Defects Engineering with Multiple Dimensions in Thermoelectric Materials

Chenxi Zhao,Li Zhou,Tianjiao Fan,Chong Xiao,Yi Xie

DOI: https://doi.org/10.34133/2020/9652749

IF: 11

2020-01-01

Research

Abstract:Going through decades of development, great progress in both theory and experiment has been achieved in thermoelectric materials. With the growing enhancement in thermoelectric performance, it is also companied with the complexation of defects induced in the materials. 0D point defects, 1D linear defects, 2D planar defects, and 3D bulk defects have all been induced in thermoelectric materials for the optimization of thermoelectric performance. Considering the distinct characteristics of each type of defects, in-depth understanding of their roles in the thermoelectric transport process is of vital importance. In this paper, we classify and summarize the defect-related physical effects on both band structure and transport behavior of carriers and phonons when inducing different types of defects. Recent achievements in experimental characterization and theoretical simulation of defects are also summarized for accurately determining the type of defects serving for the design of thermoelectric materials. Finally, based on the current theoretical and experimental achievements, strategies engaged with multiple dimensional defects are reviewed for thermoelectric performance optimization.
Defect Engineering To Tailor Metal Vacancies in 2D Conductive Metal-Organic Frameworks: An Example in Electrochemical Sensing

Yang Luo,Yinghong Wu,Artur Braun,Chao Huang,Xiao-yan Li,Carlo Menon,Paul K. Chu

DOI: https://doi.org/10.1021/acsnano.2c08097

IF: 17.1

2022-11-30

ACS Nano

Abstract:Two-dimensional conductive metal-organic frameworks (2D conductive MOFs) with π-d conjugations exhibit high electrical conductivity and diverse coordination structures, making them constitute a desirable platform for new electronic devices. Defects are inevitable in the self-assembly process of 2D conductive MOFs. Arguably, defect engineering that deliberately manipulates defects demonstrates great potential to enhance the electrocatalytic activity of this family of novel materials. Herein, a...

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Unveiling Defect Physics in Gapped Metals: A Theoretical Investigation into Defect Formation and Electronic Structure Interplay

Harshan Reddy Gopidi,Lovelesh Vashist,Oleksandr I. Malyi

2023-11-28

Abstract:In materials science, point defects play a crucial role in materials properties. This is particularly well known for the wide band gap insulators where the defect formation/compensation determines the equilibrium Fermi level and generally the doping response of a given material. Similarly, the main defect trends are also widely understood for regular metals (e.g., Cu and Zn discussed herein). With the development of electronic structure theory, a unique class of quantum materials - gapped metals (e.g., Ca6Al7O16, SrNbO3, In15SnO24, and CaN2) that exhibit characteristics of both metals and insulators - has been identified. While these materials have internal band gaps similar to insulators, their Fermi level is within one of the main band edges, giving a large intrinsic free carrier concentration. Such unique electronic structures give rise to unique defect physics, where the formation of acceptor or donor defect directly affects not only the electronic structure but also can substantially shift the Fermi level. Motivated by this, herein, we develop a fundamental first-principles theory of defect formation in gapped metal with a primary focus on accurate calculations of defect formation energy. We demonstrate that due to electron-hole recombination, the formation of acceptor defects in n-type gapped metals results in significant dependence of defect formation energy on supercell size, which we explain by the change of band filling and its effect on the defect formation energetics. To accurately describe defect formation energy, we revisit the phenomenology of band-filling corrections and demonstrate the effect of this correction, accurate potential alignment, and other factors that can affect defect energetics. Thus, this work not only sheds light on the intrinsic properties of gapped metals but, in general, establishes a theoretical foundation for analyzing defects in gapped metals.

Materials Science
Defect Engineering in 2D Materials: Precise Manipulation and Improved Functionalities

Jie Jiang,Tao Xu,Junpeng Lu,Litao Sun,Zhenhua Ni

DOI: https://doi.org/10.34133/2019/4641739

IF: 11

2019-12-02

Research

Abstract:Two-dimensional (2D) materials have attracted increasing interests in the last decade. The ultrathin feature of 2D materials makes them promising building blocks for next-generation electronic and optoelectronic devices. With reducing dimensionality from 3D to 2D, the inevitable defects will play more important roles in determining the properties of materials. In order to maximize the functionality of 2D materials, deep understanding and precise manipulation of the defects are indispensable. In the recent years, increasing research efforts have been made on the observation, understanding, manipulation, and control of defects in 2D materials. Here, we summarize the recent research progress of defect engineering on 2D materials. The defect engineering triggered by electron beam (e-beam), plasma, chemical treatment, and so forth is comprehensively reviewed. Firstly, e-beam irradiation-induced defect evolution, structural transformation, and novel structure fabrication are introduced. With the assistance of a high-resolution electron microscope, the dynamics of defect engineering can be visualized in situ . Subsequently, defect engineering employed to improve the performance of 2D devices by means of other methods of plasma, chemical, and ozone treatments is reviewed. At last, the challenges and opportunities of defect engineering on promoting the development of 2D materials are discussed. Through this review, we aim to build a correlation between defects and properties of 2D materials to support the design and optimization of high-performance electronic and optoelectronic devices.

multidisciplinary sciences
Defect emission and its dipole orientation in layered ternary Znln2S4 semiconductor

Rui Wang,Quan Liu,Sheng Dai,Chao-Ming Liu,Yue Liu,Zhao-Yuan Sun,Hui Li,Chang-Jin Zhang,Han Wang,Cheng-Yan Xu,Wen-Zhu Shao,Alfred J. Meixner,Dai Zhang,Yang Li,Liang Zhen

2023-04-27

Abstract:Defect engineering is promising to tailor the physical properties of two-dimensional (2D) semiconductors for function-oriented electronics and optoelectronics. Compared with the extensively studied 2D binary materials, the origin of defects and their influence on physical properties of 2D ternary semiconductors have not been clarified. In this work, we thoroughly studied the effect of defects on the electronic structure and optical properties of few-layer hexagonal Znln2S4 via versatile spectroscopic tools in combination with theoretical calculations. It has been demonstrated that the Zn-In anti-structural defects induce the formation of a series of donor and acceptor levels inside the bandgap, leading to rich recombination paths for defect emission and extrinsic absorption. Impressively, the emission of donor-acceptor pair (DAP) in Znln2S4 can be significantly tailored by electrostatic gating due to efficient tunability of Fermi level (Ef). Furthermore, the layer-dependent dipole orientation of defect emission in Znln2S4 was directly revealed by back focal plane (BFP) imagining, where it presents obviously in-plane dipole orientation within a dozen layers thickness of Znln2S4. These unique features of defects in Znln2S4 including extrinsic absorption, rich recombination paths, gate tunability and in-plane dipole orientation will definitely benefit to the advanced orientation-functional optoelectronic applications.

Materials Science,Optics
Computational Design Of Surfaces, Nanostructures and Optoelectronic Materials

Kamal Choudhary

DOI: https://doi.org/10.48550/arXiv.1605.08388

2016-05-27

Abstract:Properties of engineering materials are generally influenced by defects such as point defects (vacancies, interstitials, substitutional defects), line defects (dislocations), planar defects (grain boundaries, free surfaces/nanostructures, interfaces, stacking faults) and volume defects (voids). Classical physics based molecular dynamics and quantum physics based density functional theory can be useful in designing materials with controlled defect properties. In this thesis, empirical potential based molecular dynamics was used to study the surface modification of polymers due to energetic polyatomic ion, thermodynamics and mechanics of metal-ceramic interfaces and nanostructures, while density functional theory was used to screen substituents in optoelectronic materials.

Materials Science
MULTISCALE MATERIALS MODELING METHOD AND ITS APPLICATION IN MATERIALS WITH DEFECTS

Ying ZHANG,Shao-xing QU

DOI: https://doi.org/10.3969/j.issn.1005-2895.2011.01.023

2011-01-01

Abstract:Multiscale modeling and simulation is an important method to study the mechanical properties of metals and alloys,especially nanostructured crystals.The newly developed finite-temperature dynamic coupled atomistic/discrete dislocation method can be used to study the mechanical properties of crystalline materials with defects across micro,meso and macro scales.The above method is applied to investigate the deformation process of micro-sized single crystalline fcc.aluminum with a through-thickness crack subjected to remote tensile loading.The relationship among the critical stress intensity factor of crack tip emitting dislocation thickness of crack tip and the temperature is obtained.
In Situ Structural Dynamics of Atomic Defects in Tungsten Oxide

Zejian Dong,Na Zhang,Shuangbao Wang,Yuying Liu,Lifeng Zhang,Xing Chen,Langli Luo

DOI: https://doi.org/10.1021/acs.jpclett.2c01942

2022-08-11

Abstract:Atomic defects are critical to tuning the physical and chemical properties of functional materials such as catalysts, semiconductors, and 2D materials. However, direct structural characterization of atomic defects, especially their formation and annihilation under practical conditions, is challenging yet crucial to understanding the underlying mechanisms driving defect dynamics, which remain mostly elusive. Here, through in situ atomic imaging by an aberration-corrected environmental transmission electron microscope (AC-ETEM), we directly visualize the formation and annihilation mechanism of planar defects in monoclinic WO3 on the atomic scale in real time. We captured the atomistic process of the nucleation dynamics of the dislocation core in the [010] direction, followed by its propagation to form a planar defect. Corroborated by density functional theory-based calculations, we rationalize the formation of dislocation through O extraction from bridge sites followed by an atomic channeling process. These in situ observations shed light on the defect dynamics in oxides and provide atomic insights into forming and manipulating defects in functional materials.
First-principles computational methods for quantum defects in two-dimensional materials: A perspective

Hosung Seo,Viktor Ivády,Yuan Ping

DOI: https://doi.org/10.1063/5.0230736

2024-10-02

Abstract:Quantum defects are atomic defects in materials that provide resources to construct quantum information devices such as single-photon emitters (SPEs) and spin qubits. Recently, two-dimensional (2D) materials gained prominence as a host of quantum defects with many attractive features derived from their atomically thin and layered material formfactor. In this perspective, we discuss first-principles computational methods and challenges to predict the spin and electronic properties of quantum defects in 2D materials. We focus on the open quantum system nature of the defects and their interaction with external parameters such as electric field, magnetic field, and lattice strain. We also discuss how such prediction and understanding can be used to guide experimental studies, ranging from defect identification to tuning of their spin and optical properties. This perspective provides significant insights into the interplay between the defect, the host material, and the environment, which will be essential in the pursuit of ideal two-dimensional quantum defect platforms.

Computational Physics,Mesoscale and Nanoscale Physics,Materials Science,Quantum Physics
Defect repairing in two-dimensional transition metal dichalcogenides

Shiyan Zeng,Fang Li,Chao Tan,Lei Yang,Zegao Wang

DOI: https://doi.org/10.1007/s11467-023-1290-6

2023-05-30

Frontiers of Physics

Abstract:Atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDCs) have stimulated enormous research interest due to rich phase structure, high theoretical carrier mobility and layer-dependent bandgap. In view of the close correlation between defects and properties in 2D TMDCs, more attentions have been paid on the defect engineering in recent years, however the mechanism is still unclear. Herein, we review the critical progress of defect engineering and provide an extensive way to modulate the properties depressed by defects. To insight into the defect engineering, we firstly introduce two common kinds of defects during the growth progress of TMDCs and the possible distribution of energy levels those defects could induce. Then, various methods to improve point defects and grain boundaries during the period of growth are discussed intensively, with the assistance of which more large-area TMDCs films can be obtained. Considering the defects in TMDCs are inevitable regardless of concentration, we also highlight strategies to heal the defects after growth. Through dry methods or wet methods, the chalcogen vacancies can be repaired and thus, the performance of electronic device would be significantly enhanced. Finally, we propose the challenges and prospective for defect engineering in 2D TMDCs materials to support the optimization of device and lead them to wide applied fields.

physics, multidisciplinary
Electronic Structures of Graphene Layers on a Metal Foil: the Effect of Atomic-Scale Defects

Hui Yan,Cheng-Cheng Liu,Ke-Ke Bai,Xuejiao Wang,Mengxi Liu,Wei Yan,Lan Meng,Yanfeng Zhang,Zhongfan Liu,Rui-fen Dou,Jia-Cai Nie,Yugui Yao,Lin He

DOI: https://doi.org/10.1063/1.4824206

IF: 4

2013-01-01

Applied Physics Letters

Abstract:Here, we report a facile method to generate a high density of atomic-scale defects in graphene on metal foil and show how these defects affect the electronic structures of graphene layers. Our scanning tunneling microscope measurements, complemented by first-principles calculations, reveal that the atomic-scale defects result in both the intervalley and intravalley scattering of graphene. The Fermi velocity is reduced in the vicinity area of the defect due to the enhanced scattering.
Defect Engineering of Two-Dimensional Transition-Metal Dichalcogenides: Applications, Challenges, and Opportunities

Qijie Liang,Qian Zhang,Xiaoxu Zhao,Meizhuang Liu,Andrew T. S. Wee

DOI: https://doi.org/10.1021/acsnano.0c09666

IF: 17.1

2021-01-15

ACS Nano

Abstract:Atomic defects, being the most prevalent zero-dimensional topological defects, are ubiquitous in a wide range of 2D transition-metal dichalcogenides (TMDs). They could be intrinsic, formed during the initial sample growth, or created by postprocessing. Despite the majority of TMDs being largely unaffected after losing chalcogen atoms in the outermost layer, a spectrum of properties, including optical, electrical, and chemical properties, can be significantly modulated, and potentially invoke applicable functionalities utilized in many applications. Hence, controlling chalcogen atomic defects provides an alternative avenue for engineering a wide range of physical and chemical properties of 2D TMDs. In this article, we review recent progress on the role of chalcogen atomic defects in engineering 2D TMDs, with a particular focus on device performance improvements. Various approaches for creating chalcogen atomic defects including nonstoichiometric synthesis and postgrowth treatment, together with their characterization and interpretation are systematically overviewed. The tailoring of optical, electrical, and magnetic properties, along with the device performance enhancement in electronic, optoelectronic, chemical sensing, biomedical, and catalytic activity are discussed in detail. Postformation dynamic evolution and repair of chalcogen atomic defects are also introduced. Finally, we offer our perspective on the challenges and opportunities in this field.This article has not yet been cited by other publications.

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Chemistry and Physics of Point Defects in Advanced Ceramics

Zhou Zhi-Gang,Tang Zi-Long

DOI: https://doi.org/10.3724/sp.j.1077.2009.00417

2009-01-01

Abstract:The structure and behavior of defects, especial point defects are the key to understand the structural imperfection of structure-sensitive advanced ceramics and related devices. A conception of chemistry and physics, especially for electronics oil the point defect in the advanced ceramics is briefly reviewed in the present work. Several achieved examples of defect engineering and microscopic control technology for improving some ceramics/devices of electric, magnetic, optical, mechanical and/or biological behavior by defect improve/rebuild are discussed. The knowledge of how defects influence the ceramics/device performance is revealed and point defects provide very useful tools for understanding their basic characteristics and to open up their potentiality of the new advanced ceramics/devices ill the near future.
Defect Chemistry Special Collection

Shuangyin Wang,Qiang Zhang,Wei Zhang,Yi Jia

DOI: https://doi.org/10.1002/asia.202001269

2021-01-01

Chemistry - An Asian Journal

Abstract:Engineering defects in materials to tune their properties for different applications has gained momentum in recent years. Chemistry - An Asian Journal and ChemNanoMat, together with Prof. Shuangyin Wang (Hunan University, China), Prof. Qiang Zhang (Tsinghua University, China), Prof. Wei Zhang (Shaanxi Normal University, China), and Prof. Yi Jia (Griffith University, Australia) are greatly honored to assemble a special collection of the latest works on Defect Chemistry, directed mainly towards electrocatalysis, photocatalysis, and electrochemical energy storage.

Electronic structure and energy of defects in metals and materials design

Atomic Defects in Two‐Dimensional Materials: from Single‐Atom Spectroscopy to Functionalities in Opto‐/Electronics, Nanomagnetism, and Catalysis

Electronic-Structure And Defect Spectroscopy Of Point-Defects In Metals

Atomically Resolved Defect-Engineering Scattering Potential in 2D Semiconductors

ENERGETICS OF METALLIC DEFECT AND ELECTRONIC STRUCTURE OF DOPED GRAIN BOUNDARY

Defect physics in complex energy materials

Defects Engineering with Multiple Dimensions in Thermoelectric Materials

Defect Engineering To Tailor Metal Vacancies in 2D Conductive Metal-Organic Frameworks: An Example in Electrochemical Sensing

Unveiling Defect Physics in Gapped Metals: A Theoretical Investigation into Defect Formation and Electronic Structure Interplay

Defect Engineering in 2D Materials: Precise Manipulation and Improved Functionalities

Defect emission and its dipole orientation in layered ternary Znln2S4 semiconductor

Computational Design Of Surfaces, Nanostructures and Optoelectronic Materials

MULTISCALE MATERIALS MODELING METHOD AND ITS APPLICATION IN MATERIALS WITH DEFECTS

In Situ Structural Dynamics of Atomic Defects in Tungsten Oxide

First-principles computational methods for quantum defects in two-dimensional materials: A perspective

Defect repairing in two-dimensional transition metal dichalcogenides

Electronic Structures of Graphene Layers on a Metal Foil: the Effect of Atomic-Scale Defects

Defect Engineering of Two-Dimensional Transition-Metal Dichalcogenides: Applications, Challenges, and Opportunities

Chemistry and Physics of Point Defects in Advanced Ceramics

Defect Chemistry Special Collection