Ferroelectric Order Evolution in Freestanding PbTiO3 Films Monitored by Optical Second Harmonic Generation
Sisi Huang,Shuai Xu,Cheng Ma,Pengzhan Li,Er‐Jia Guo,Chen Ge,Can Wang,Xiulai Xu,Meng He,Guozhen Yang,Kuijuan Jin
DOI: https://doi.org/10.1002/advs.202307571
IF: 15.1
2024-06-25
Advanced Science
Abstract:In this work, freestanding PbTiO3 films exhibit an orthorhombic‐like phase, whereas the tetragonal phase is observed in epitaxial PbTiO3 films. Remarkably, the ferroelectricity is strengthened under small uniaxial tensile strain up to 1.66% in the 50 nm‐thick freestanding PbTiO3 films with Curie temperature of 630 K. These findings provide valuable understanding for fabricating electronic nanodevices with flexibility and thermostability. The demand for low‐dimensional ferroelectric devices is steadily increasing, however, the thick substrates in epitaxial films impede further size miniaturization. Freestanding films offer a potential solution by eliminating substrate constraints. Nevertheless, it remains an ongoing challenge to improve the stability in thin and fragile freestanding films under strain and temperature. In this work, the structure and ferroelectric order of freestanding PbTiO3 (PTO) films are investigated under continuous variation of the strain and temperature using nondestructive optical second harmonic generation (SHG) technique. The findings reveal that there are both out‐of‐plane and in‐plane domains with polarization along out‐of‐plane and in‐plane directions in the orthorhombic‐like freestanding PTO films, respectively. In contrast, only out‐of‐plane domains are observed in the tetragonal epitaxial PTO films. Remarkably, the ferroelectricity of freestanding PTO films is strengthened under small uniaxial tensile strain from 0% up to 1.66% and well‐maintained under larger biaxial tensile strain up to 2.76% along the [100] direction and up to 4.46% along the [010] direction. Moreover, a high Curie temperature of 630 K is identified in 50 nm thick freestanding PTO films by wide‐temperature‐range SHG. These findings provide valuable understanding for the development of the next‐generation electronic nanodevices with flexibility and thermostability.
materials science, multidisciplinary,nanoscience & nanotechnology,chemistry