Simulations and Analysis of the Moving Mask UV Lithography for Thick-photoresist

Qian Yu,Zaifa Zhou,Heng Zhang
DOI: https://doi.org/10.4028/www.scientific.net/amm.455.88
2013-01-01
Applied Mechanics and Materials
Abstract:A three-dimensional (3D) simulation system is developed for the moving mask UV lithography of thick photoresist. The exposure simulation model is obtained with consideration of the mask moving function, the refraction and energy loss of the UV light at the surface of photoresist, and the reflection at the photoresist/substrate interface. The development model is calculated by the fast marching method. In addition, the energy deposition distributions and the three-dimensional development profiles are presented under different conditions to study the effect of various parameters and to verify the accuracy by experiment. The results will be useful to understand the effects and to control the exposure conditions in the design process of moving mask UV lithography for thick-photoresist in the future.
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