Effects of CeO2 Buffer Layer on the Dielectric Properties of Ba0.6Sr0.4TiO3 Thin Films Prepared by Sol–gel Processing

Yanlong Bian,Jiwei Zhai

DOI: https://doi.org/10.1007/s10971-013-3182-7

2013-01-01

Journal of Sol-Gel Science and Technology

Abstract:The Ba0.6Sr0.4TiO3 (BST60) thin films were deposited on Pt(111)/Ti/SiO2/Si(100) substrates by a sol–gel method. The thickness of CeO2, serving as a buffer layer, was varied from 0 to 75 nm, in order to optimize the dielectric tunable property. X-ray patterns analysis indicates that all the thin films exhibit good crystalline quality with a pure perovskite phase and insertion of the CeO2 buffer layer does not change the crystal structure of BST60. Dielectric properties of the thin films were investigated as a function of both temperature and direct current electric field. The results show that dielectric constant and loss are modified by insertion of the CeO2 buffer layer. The BST60 thin films with 25 nm thickness CeO2 buffer layer have the highest figure of merit, low dielectric loss, and suitable dielectric constant, which render them attractive for the tunable microwave device applications.