Dielectric Properties and High-Temperature Dielectric Relaxation of Ba 4 Gd 2 Fe 2 Nb 8−x Ta X O 30 Ceramics

Zhao Yang,Liang Fang,Laijun Liu,Congxue Su,Changzhen Hu
DOI: https://doi.org/10.1007/s10854-013-1553-z
2013-01-01
Journal of Materials Science Materials in Electronics
Abstract:Several ferrum oxides of formula Ba4Gd2Fe2Nb8−xTaxO30 (x = 2, 4, 6 and 8) with tetragonal tungsten-bronze structure have been synthesized by the conventional solid state sintering method. Dielectric response of the samples was studied using AC impedance spectroscopy and universal dielectric relaxation law in detail. The dielectric anomaly at high temperature is attributed to the mobility of oxygen vacancies. Arrhenius activation energy associated with the migration of oxygen vacancies is estimated from impedance spectroscopy, which is 0.77, 1.11, 1.26 and 1.02 eV for x = 2, 4, 6 and 8, respectively.
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