Abstract:Semiconducting single-walled carbon nanotubes (s-SWNTs) have emerged as a promising class of electronic materials, but the metallic (m)-SWNTs present in all as-synthesized nanotube samples must be removed for many applications. A high selectivity and high yield separation method has remained elusive. A separation process based on selective chemistry appears to be an attractive route since it is usually relatively simple, but more effective chemicals are needed. Here we demonstrate the first example of a new class of dual selective compounds based on polycyclic aromatic azo compounds, specifically Direct Blue 71 (I), for high-purity separation of s-SWNTs at high yield. Highly enriched (~93% purity) s-SWNTs are produced through the simple process of standing arc-discharge SWNTs with I followed by centrifugation. The s-SWNTs total yield is up to 41%, the highest yet reported for a solution-based separation technique that demonstrates applicability in actual transistors. 91% of transistor devices fabricated with these s-SWNTs exhibited on/off ratios of 10(3) to 10(5) with the best devices showing mobility as high as 21.8 cm(2)/V s with on/off ratio of 10(4). Raman and X-ray photoelectron spectroscopic shifts and ultraviolet-visible-near-infrared (UV-vis-NIR) show that I preferentially complexes with s-SWNTs and preferentially suspends them. Preferential reaction of naphthyl radicals (generated from I with ultrasonication) with m-SWNTs is confirmed by changes in the D-band in the Raman spectroscopy, matrix-assisted desorption-ionization time-of-flight mass spectrometry (MALDI-TOF-MS), and molecular simulation results. The high selectivity of I stems from its unique dual action as both a selective dispersion agent and the generator of radicals which preferentially attack unwanted metallic species.

Selective silencing of the electrical properties of metallic single-walled carbon nanotubes by 4-nitrobenzenediazonium tetrafluoroborate

Ultrathin High-Mobility SWCNT Transistors with Electrodes Printed by Nanoporous Stamp Flexography

Selective Small-Diameter Metallic Single-Walled Carbon Nanotube Removal by Mere Standing with Anthraquinone and Application to a Field-Effect Transistor

Selective growth of semiconducting single-walled carbon nanotubes solely from carbon monoxide

High-yield sorting of small-diameter carbon nanotubes for solar cells and transistors

High Yield Fabrication of Semiconducting Thin-Film Field-Effect Transistors Based on Chemically Functionalized Single-Walled Carbon Nanotubes

Using Nanoscale Thermocapillary Flows to Create Arrays of Purely Semiconducting Single-Walled Carbon Nanotubes

Selective Electrochemical Etching of Single‐Walled Carbon Nanotubes

Microwave Purification of Large-Area Horizontally Aligned Arrays of Single-Walled Carbon Nanotubes

Single-Walled Carbon Nanotube Thin Film with High Semiconducting Purity by Aerosol Etching toward Thin-Film Transistors

Electrical and photoresponse properties of printed thin-film transistors based on poly(9,9-dioctylfluorene-co -bithiophene) sorted large-diameter semiconducting carbon nanotubes

Selective Growth of Metal‐Free Metallic and Semiconducting Single‐Wall Carbon Nanotubes

Scalable and Effective Enrichment of Semiconducting Single-Walled Carbon Nanotubes by a Dual Selective Naphthalene-Based Azo Dispersant.

Direct discrimination between semiconducting and metallic single-walled carbon nanotubes with high spatial resolution by SEM

Selective Surface Charge Sign Reversal on Metallic Carbon Nanotubes for Facile Ultrahigh Purity Nanotube Sorting.

Fabrication and Electrical Properties of Printed Carbon Nanotube Thin Film Transistors (TFTs) Based on Self-made Carbon Nanotubes

Order of magnitude improvement in the transport performance of carbon nanotube films by completely removing surfactants

Effect of surface wettability properties on the electrical properties of printed carbon nanotube thin-film transistors on SiO2/Si substrates.

Rapid annealing and cooling induced surface cleaning of semiconducting carbon nanotubes for high-performance thin-film transistors

A Facile, Low‐Cost, and Scalable Method of Selective Etching of Semiconducting Single‐Walled Carbon Nanotubes by a Gas Reaction

High Performance Thin Film Transistors Based on Regioregular Poly(3-Dodecylthiophene)-sorted Large Diameter Semiconducting Single-Walled Carbon Nanotubes