Abstract:Photoluminescent silicon oxycarbide (SiO x C y ) thin films were deposited on n-type (100) silicon substrates using the organic catalytic chemical vapor deposition (O-Cat-CVD) technique employing tetra-ethyl orthosilicate (TEOS) as an organic-based precursor. These films were annealed at a temperature of 500, 800 and 1000°C for 30 minutes in a nitrogen (N 2 ) environment. The as-deposited and annealed SiO x C y films were analyzed using optical and structural characterizations, such as photoluminescence (PL), Fourier transform infrared (FTIR), X-ray photoelectron spectroscopy (XPS), Secondary ion mass spectrometry (SIMS) and scanning electron microscopy (SEM). The PL spectrum of the as-deposited film showed emission in the blue-green region, while the annealed SiO x C y films showed strong emission from blue to near-infrared. The PL in all the films was attributed to different structural defects related to oxygen and carbon that act as radiative centers in the SiO x C y network. The annealed films showed an increase in the emission intensity, where the annealed film at 800°C displayed the highest emission intensity. This is related to an increase in the amount of radiative defects in the films due to structural and compositional changes after the thermal annealing (TA). XPS and SIMS measurements showed an oxygen incorporation with the TA, increasing from 54.59 at. % to 63.5 at. % for the as-deposited and annealed at 1000°C films, respectively. FTIR spectra showed an increase in the Si-O-C and Si-O-Si bonds and the hydrogen and other radicals desorption. These results support the creation of radiative centers due to structural changes in the films after the thermal annealing.

Effects of Thermal Treatment on Infrared Optical Properties of SiO 2 Films on Si Substrates

Insights into Effects of Thermal Annealing on Optical Properties of SiO2films

Analysis on Effects of Thermal Treatment on Structural Characteristic of Ion Beam Sputtering SiO2 Films

Aging Effect of Optical Properties on Sio2 Films Grown on Si Substrates by Ion Beam Sputtering

Study on Optical Anisotropy Properties of SiO2 Films with Different Thermal Annealing Temperatures

Optical and Mechanical Properties and Microstructures of Nb2O5, Ta2O5 and SiO2 Thin Films Prepared by Ion Beam Sputtering

Effect of Heat Treatment on Properties of HfO2 Film Deposited by Ion-Beam Sputtering

Effects of Rapid Thermal Annealing on the Morphology and Optical Property of Ultrathin Insb Film Deposited on Sio2/Si Substrate

In Situ Optical Characterizations of the Annealing Effects Upon Sno2: F Films by Spectroscopic Ellipsometry

Influences of Annealing Temperature on the Optical Properties of SiOx Thin Film Prepared by Reactive Magnetron Sputtering

Effects of Substrate Temperature on the Properties of Silicon Oxide Films by PECVD

Effect of Oxygen Flow Rate on Microstructure Properties of SiO2 Thin Films Prepared by Ion Beam Sputtering

Temperature Dependent Optical Constants for SiO2 Film on Si Substrate by Ellipsometry

Effects of Composition and Thermal Annealing on the Mechanical Properties of Silicon Oxycarbide Films

Air-Annealing Effects on Sio2/Ito Coating

Effect of thermal annealing on the luminescent and structural properties of the SiO x C y thin films by organic catalytic chemical vapor deposition

Calculate Ir Optical Constants of Si Substrate under High Temperature Condition

Effects Of Thermal Treatment On The Optical Constants Of Gete, Sb2te3, Ge2sb2te5 Systems

Effect of sputtering power on the properties of SiO 2 films grown by radio frequency magnetron sputtering at room temperature

Study on the Effect of Process Conditions on the Thermo-Optic Coefficient of Amorphous Silicon Films

Thermal-Induced Optical Changes In The Amorphous Ge20sb15se65 Film