Influence of Multi-Field Coupling on Interface Structures of Au/Cu/Si in Vacuum

严楷,曹江利,姚文清,严谨,李展平,朱永法
DOI: https://doi.org/10.3969/j.issn.1672-7126.2013.08.08
2013-01-01
Abstract:The possible impacts of the space environmental conditions, including the ultraviolet (UV) irradiation, micro-aerobic, and heating-cooling cycle, on the Au/Cu/Si in terfaces, were evaluated in experimental ground simulation. The Au/Cu films, deposited on Si substrate by magnetron sputtering, were characterized, before and after the simulation, with X-ray diffraction, scanning electron microscopy, scanning Auger microprobe (SAM), and atomic force microscopy. The results show that the UV irra diation, heating, and micro-aerobic process strongly affect the Cu diffusion. For example, a temperature rise, mainly because of UV irradiation and/or resistive heating, increased defect density in the films, providing more Cu diffusion paths; and micro-aerobic induced Cu diffusion. We found that an annealing at 100°C stabilized the Au/Cu/Si interfaces, possibly because of surface desorption of oxygen.
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