Abstract:Irradiation-induced atomic-scale defects and lattice disorder in Silicon Carbide (SiC) can significantly affect the material's mechanical properties. Currently there lacks a unified physical model capable of describing the law in which the properties of SiC scale with the accumulation of defects, especially in terms of the underlying physical mechanism. To develop fundamental models that are capable of describing the various physical properties of SiC as a function of microstructural change, molecular dynamics simulations of uniaxial tension were performed on a series of irradiation-amorphized SiC (a-SiC) samples with a range of imposed chemical disorder, which is defined as the ratio between the number of homonuclear bonds and heteronuclear bonds (chi NC-C / NSi-C). With increasing chemical disorder, significant alternation of mechanical response of a-SiC has been detected in terms of increasingly pronounced plastic flow. Meanwhile relevant mechanical properties, including Young's modulus, strength, yield stress and strain, as well as failure strain scale monotonically with chemical disorder while in distinct manners. Specifically slight chemical disorder (chi = 0.045) could induce substantial reduction of Young's modulus up to -2%, whereas strength basically linearly varies with chemical disorder until chi approximate to 0.5 upon which the variations in mechanical properties tend to saturate. Further examination of the evolution of atomic structure of a-SiC reveals a crossover of deformation mechanisms from homogeneous elastic deformation to localized plastic flow, which accounts for the strong chemical disorder dependence of the mechanical properties as well as mechanical responses of amorphous SiC. This crossover is also manifested in switching of fracture mode from brittle failure dominated by lattice instability in the ligaments between topological disordered clusters to nanoductile failure preceded by percolation of nanocavities. Employing chemical disorder to measure the defect concentration of a-SiC could contribute to the quantification of the correlation between mechanical properties and the corresponding defective a-SiC structure. Moreover the distinct scale laws shown by Young's modulus and strength with chemical disorder and the proposed critical chemical disorder threshold could benefit the quantitative evaluations of the mechanical performances of SiC components in different irradiation environments.

Electron–ion Coupling Effects on Radiation Damage in Cubic Silicon Carbide

General Model for Defect Dynamics in Ionizing-Irradiated SiO<sub>2</sub>-Si Structures

Molecular Dynamics Study on the Irradiation-Induced Damage in SiC

General Model for Defect Dynamics in Ionizing‐Irradiated SiO 2 ‐Si Structures

General Model for Defect Dynamics in Ionizing‐Irradiated SiO <sub>2</sub> ‐Si Structures

Study of irradiation damage in silicon at different scales

Non-monotonic Temperature Dependence of Radiation Defect Dynamics in Silicon Carbide

Molecular dynamics study of damage nearby silicon surface bombarded by energetic carbon ions

Universal Analytic Model of Irradiation Defect Dynamics in Silica-Silicon Structures

Evolution of small defect clusters in ion-irradiated 3C-SiC: combined cluster dynamics modeling and experimental study

Influence of Temperature and Incidence Angle on the Irradiation Cascade Effect of 6H-SiC: Molecular Dynamics Simulations

Modeling of long-term defect evolution in heavy-ion irradiated 3C-SiC: Mechanism for thermal annealing and influences of spatial correlation

Molecular dynamics simulation of displacement cascades in cubic silicon carbide

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

The Role of Point Defects in the Swelling and Elastic Modulus of Irradiated Cubic Silicon Carbide

Distribution of defect clusters in the primary damage of ion irradiated 3C-SiC

Irradiation effect of primary knock-on atoms on conductivity compensation in N-type 4H-SiC Schottky diode under various irradiations

Multiscale insights into the radiation effect of semiconductor materials

Molecular dynamics study of effects of point defects on thermal conductivity in cubic silicon carbide

Atomistic Simulations of the Mechanical Deformation of Irradiation-Amorphized Silicon Carbide

A Multi-Scale Simulation Study of Irradiation Swelling of Silicon Carbide