Nitridation of Atomic-Layer-deposited HfO2/Al2O3 Stacks by NH3 Annealing

Jian-Shuang Liu,Yang Geng,Lin Chen,Qing-Qing Sun,Peng Zhou,Hong-Liang Lu,David Wei Zhang

DOI: https://doi.org/10.1016/j.tsf.2012.03.066

IF: 2.1

2013-01-01

Thin Solid Films

Abstract:HfO2/Al2O3 stacks are grown on Si (100) substrate by atomic layer deposition and then nitridized using ammonia (NH3) annealing in the temperature range of 600–900°C. The effects of NH3 annealing temperature on the structural and physical properties are investigated. HfO2 phase changes from monoclinic to orthorhombic with the annealing treatment. Moreover, the increasing of the grain size and decreasing of the valence band maximum with increasing annealing temperature are demonstrated. In addition, the film annealed at 900°C clearly shows that there exists an amorphous Al2O3 layer between partially crystalline HfO2 layer and the Si substrate.