Defect Structure And Optical Damage Resistance Of In:Er:Litao3 Crystals

Ting Sun,Xiaodong Zhang,Liang Sun,Rui Wang
DOI: https://doi.org/10.1117/12.2028697
2013-01-01
Abstract:LiTaO3 single crystals double-doped with 1.0 mol% Er3+ and various In3+ ions (In:Er:LiTaO3) were grown by the Czochralski method from a congruent melt (C-Li/C-Ta=0.946). Ultraviolet-visible absorption spectra were measured and discussed in terms of the defect structure. Threshold concentration of In3+ ion is 3.0 mol%. Optical damage resistance of In:Er:LiTaO3 crystals were characterized by the transmitted beam pattern distortion method. Optical damage resistance of In:Er:LiTaO3 crystals significantly increases when the concentration of In3+ ion exceeds its threshold concentration. The optical damage resistance magnitude of In(3.0mol%):Er:LiTaO3 crystal is two orders higher than that of Er:LiTaO3 crystal. The optical damage resistance could be well understood in view of defect structure.
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