Superior Hydrogen Storage and Electrochemical Properties of Mg(x)Ni(100-x)/Pd Films at Room Temperature.

Tong Liu,Yurong Cao,Gongbiao Xin,Xingguo Li
DOI: https://doi.org/10.1039/c3dt51628h
IF: 4
2013-01-01
Dalton Transactions
Abstract:The Mg(x)Ni(100-x) films of 100 nm have been prepared by magnetron co-sputtering Mg and Ni targets, and a Pd layer of 10 nm was deposited on these films by magnetron sputtering a Pd target. Mg2Ni and MgNi2 are directly generated during the co-sputtering process in the Mg84Ni16/Pd and Mg48Ni52/Pd films. The hydrogen storage properties of the films under 0.1 MPa H2 at 298 K were investigated. The hydrogenation of the Mg84Ni16/Pd film saturates within 45 s and exhibits the faster absorption kinetics compared with Mg94Ni6/Pd and Mg48Ni52/Pd films. The electrochemical properties of the Mg(x)Ni(100-x)/Pd films were investigated in 6 M KOH with a three-electrode cell. The Mg84Ni16/Pd film can be activated just at the first cycle. The maximum discharge capacity of the Mg84Ni16/Pd film is 482.7 mAh g(-1), the highest among these films.
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