Ab initio study of the friction mechanism of fluorographene and graphane

Linfeng Wang,Tianbao Ma,Yuanzhong Hu,Hui Wang,Tianmin Shao

DOI: https://doi.org/10.1021/jp401097a

2013-01-01

Abstract:The atomic-scale friction in fluorographene and graphane is investigated employing the density functional theory calculation including the dispersion correction (DFT-D). Fluorographene and graphane exhibit low friction because of the low interlayer interaction induced by the repulsive electrostatic forces between F or H atoms at the interfaces. Moreover, owing to the less electronegativity of H atoms than F atoms, the variation of interlayer spacing and system energy corrugation, which is predominantly determined by the variation of dispersion energy during both loading and sliding processes, as elucidated in this paper, is found to be much larger in graphane, which well explains the larger friction in graphane than in fluorographene. The more charged F atom in fluorographene diminishes the variation of the interlayer spacing, which finally decreases the variation of the dispersion energy in the fluorographene. The study theoretically reveals the general mechanism of atomic-scale friction in various graphene-based layered materials where the interlayer interaction is dominated by van der Waals and electrostatic interactions, which shed light on friction reduction and the design of new lubricant materials.