Abstract:Exploring new Hall effect is always a fascinating research topic. The ordinary Hall effect and the quantum Hall effect, initially discovered in two-dimensional (2D) non-magnetic systems, are the phenomena that a transverse current is generated when a system carrying an electron current is placed in a magnetic field perpendicular to the currents. In this work, we propose the electric counterparts of these two Hall effects, termed as electric Hall effect (EHE) and quantum electric Hall effect (QEHE). The EHE and QEHE emerge in 2D magnetic systems, where the transverse current is generated by applying an electric gate-field instead of a magnetic field. We present a symmetry requirement for intrinsic EHE and QEHE. With a weak gate-field, we establish an analytical expression of the intrinsic EHE coefficient. We show that it is determined by intrinsic band geometric quantities: Berry curvature and its polarizability which consists of both intraband and interband layer polarization. Via first-principles calculations, we investigate the EHE in the monolayer Ca(FeN)$_2$, where significant EHE coefficient is observed around band crossings. Furthermore, we demonstrate that the QEHE can appear in the semiconductor monolayer $\rm BaMn_2S_3$, of which the Hall conductivity exhibits steps that take on the quantized values $0$ and $\pm1$ in the unit of $e^2/h$ by varying the gate-field within the experimentally achievable range. Due to the great tunability of the electric gate-field, the EHE and QEHE proposed here can be easily controlled and should have more potential applications.

Electron Transport in a HgTe Quantum Spin Hall Bar with Periodic Electric Modulations

Electron Interferometry in the Quantum Hall Regime: Aharonov-Bohm Effect of Interacting Electrons

Low-field Quantum Hall Transport in an Electron Fabry-Perot Interferometer

Low-Field Quantum Hall Transport in an Electron Fabry-Perot Interferometer: Dependence of Constriction Filling on Front-Gate Voltage

Quantum Transport Through Periodically Arranged Magnetic Barriers.

Electron Tunneling Through a Planar Single Barrier in HgTe Quantum Wells with Inverted Band Structures

Effect of Magnetic Field on Electron Transport in HgTe/CdTe Quantum Wells: Numerical Analysis

Electronic Transport in Nanostructures Consisting of Magnetic Barriers.

Interplay of Chiral and Helical States in a Quantum Spin Hall Insulator Lateral Junction

Spin polarized Charge Trapping and Transfer at a HgTe Topological Insulator Quantum Dot

Intrinsic Spin Hall Effect Induced by Quantum Phase Transition in HgCdTe Quantum Wells.

Inverse Spin Hall Effect in a HgTe Quantum Well

ROBUST TRANSPORT OF QUANTUM SPIN HALL STATE IN HgTe/CdTe QUANTUM WELL

Quantum Spin Hall Insulator State in HgTe Quantum Wells

Interface Edge States and Quantum Hall Effect in Graphene under A Modulated Magnetic Field

Light-induced phase crossovers in a quantum spin Hall system

Quantum Hall effect and current distribution in the 3D topological insulator HgTe

Electric Hall Effect and Quantum Electric Hall Effect

Nondissipative Spin Hall Effect Via Quantized Edge Transport

Electron Transport Through Double Quantum Dots with Spin-Polarization Dependent Interdot Coupling

Cavity-modified quantum electron transport in multi-terminal devices and interferometers