Creation of Helical Dirac Fermions by Interfacing Two Gapped Systems of Ordinary Fermions

Z. F. Wang,Meng-Yu Yao,Wenmei Ming,Lin Miao,Fengfeng Zhu,Canhua Liu,C. L. Gao,Dong Qian,Jin-Feng Jia,Feng Liu
DOI: https://doi.org/10.1038/ncomms2387
IF: 16.6
2013-01-01
Nature Communications
Abstract:Topological insulators are a unique class of materials characterized by a Dirac cone state of helical Dirac fermions in the middle of a bulk gap. When the thickness of a three-dimensional topological insulator is reduced, however, the interaction between opposing surface states opens a gap that removes the helical Dirac cone, converting the material back to a normal system of ordinary fermions. Here we demonstrate, using density function theory calculations and experiments, that it is possible to create helical Dirac fermion state by interfacing two gapped films-a single bilayer Bi grown on a single quintuple layer Bi(2)Se(3) or Bi(2)Te(3). These extrinsic helical Dirac fermions emerge in predominantly Bi bilayer states, which are created by a giant Rashba effect with a coupling constant of ~4 eV·Å due to interfacial charge transfer. Our results suggest that this approach is a promising means to engineer topological insulator states on non-metallic surfaces.
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