Abstract:Graphene: a sp2 carbon system is a zero band gap semiconductor. In spite of having extraordinary properties, opening of band gap is the bottleneck in the path of graphene for becoming the heart of all modern electronics. Chemical doping can prove itself to be the fastest solution to this problem as it is one of the most informal approaches to induce band gap in pristine. Due to tiny nanostructures and dimensions of graphene, modelling and simulative study of graphene is more effective and confirmative than experimental results. In this study we have compared our results with the previous works, our simulation matches well with the previous works. The main concern is on the substitution and pair doping of BN, B and N open up an energy band gap up to (0.379eV) and (0.386eV). Codoping of B-N create a band gap up to (0.712eV) and pair doping shows that 1BN(0.616eV), 2BN(0.386eV), 3BN pair create a sharp increase in band gap up to (1.457eV) when substitute on graphene, while the substitution doping and increased in the super cell models with the same doping concentration of silicon induced a band gap of 1.019eV, where Si doping on different super cell shows a band gap enhancement from 0.57eV at (6x6) model to 1.90eV at (5x5) model and change its nature from semimetal to semiconductor. The present review article focuses on the alteration of electronic and optical properties by adding different dopants on to the graphene sheets, using density functional theory (DFT) calculations. Doping can improve the electronic properties of graphene by producing a small band gap in it, resulting in the appropriateness of this interesting material for modern electronics. Different codes and approximations have been applied to tune the band structure of graphene that has been discussed in the article.

Communication: Oscillated Band Gaps of B/N-codoped Α-Graphyne

Electronic Properties of Α-Graphyne on Hexagonal Boron Nitride and Α-Bnyne Substrates

Influence of B doping and N doping on structure and electronic properties of graphene

Nonlinear Bandgap Opening Behavior of Bn Co-Doped Graphene

Contrastive band gap engineering of strained graphyne nanoribbons with armchair and zigzag edges

A first-principle study of α - and γ -graphyne and its BN and BC 2 N analogs

First-principles Study of Electronic and Optical Properties of Boron and Nitrogen Doped Graphene

Effect of boron and phosphorus codoping on the electronic and optical properties of graphitic carbon nitride monolayers: First-principle simulations

Band-Gap Engineering with Hybrid Graphane−Graphene Nanoribbons

Band gap engineering in penta-graphene by substitutional doping: first-principles calculations

Why the Band Gap of Graphene is Tunable on Hexagonal Boron Nitride

Why Do Boron and Nitrogen Doped Α- and Γ-Graphyne Exhibit Different Oxygen Reduction Mechanism? A First-Principles Study

Carbon-Based Band Gap Engineering in the h-BN Analytical Modeling

First-principle Study on Electronic and Optical Properties of (al, P, Al-P) Doped Graphene

Advances in tuning band gap of graphene by potential doping using DFT: a review

B-Doped Graphdiynes and Several of Their Corresponding Oxides: A Theoretical Study by X-ray Spectra

Electronic structures and bonding of graphyne sheet and its BN analog

Tuning the Electronic and Optical Properties of Hexagonal Boron-Nitride Nanosheet by Inserting Graphene Quantum Dots

Structural, Phononic and Electronic Properties of Ge-doped Γ-Graphynes: A First-Principles Study

Tight-binding Description of Graphyne and Its Two-Dimensional Derivatives.

Flexible Band Gap Tuning of Hexagonal Boron Nitride Sheets Interconnected by Acetylenic Bonds.