Pressure Dependency of Thermal Boundary Conductance of Carbon Nanotube/silicon Interface: A Molecular Dynamics Study

Huake Liu,Huizhong Zeng,Taisong Pan,Wen Huang,Yuan Lin
DOI: https://doi.org/10.1063/1.4749798
IF: 2.877
2012-01-01
Journal of Applied Physics
Abstract:Thermal boundary conductance (TBC) of open carbon nanotube (CNT) and crystal silicon was investigated by the method of molecular dynamics (MD) simulation. Van der Waals interaction was used to form the interface between the vertically mounted CNT and the silicon surface. The interfacial TBC was extracted from the thermal relaxation between CNT and Si with different initial temperatures. An enhancement of TBC was spotted with the increase of the external pressure. At the interfacial region, the phonon densities of states of CNT and Si were altered by the external pressure, especially at the frequency between 2 THz and 15 THz, which could be associated with the enhancement of TBC.
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